K3N5V1000F-DC Datasheet PDF - Samsung Semiconductor
Part Number | K3N5V1000F-DC | |
Description | 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM | |
Manufacturers | Samsung Semiconductor | |
Logo | ||
There is a preview and K3N5V1000F-DC download ( pdf file ) link at the bottom of this page. Total 3 Pages |
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CMOS MASK ROM
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM
FEATURES
• Switchable organization
2,097,152 x 8(byte mode)
1,048,576 x 16(word mode)
• Fast access time
3.3V Operation : 100ns(Max.)@CL=50pF,
120ns(Max.)@CL=100pF
3.0V Operation : 120ns(Max.)@CL=100pF
• Supply voltage : single +3.0V/single +3.3V
www.DataSheet4•UC.cuormrent consumption
Operating : 40mA(Max.)
Standby : 30µA(Max.)
• Fully static operation
• All inputs and outputs TTL compatible
• Three state outputs
• Package
-. K3N5V(U)1000F-DC : 42-DIP-600
-. K3N5V(U)1000F-GC : 44-SOP-600
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
The K3N5V(U)1000F-D(G)C is a fully static mask programma-
ble ROM fabricated using silicon gate CMOS process technol-
ogy, and is organized either as 2,097,152 x 8 bit(byte mode) or
as 1,048,576x16 bit(word mode) depending on BHE voltage
level.(See mode selection table)
This device operates with 3.0V or 3.3V power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The K3N5V(U)1000F-DC is packaged in a 42-DIP and the
K3N5V(U)1000F-GC in a 44-SOP.
PIN CONFIGURATION
A19
.
.
.
.
.
.
.
.
A0
A-1
X
BUFFERS
AND
DECODER
Y
BUFFERS
AND
DECODER
MEMORY CELL
MATRIX
(1,048,576x16/
2,097,152x8)
SENSE AMP.
DATA OUT
BUFFERS
...
CE
OE
BHE
]
CONTROL
LOGIC
Q0/Q8
Pin Name
A0 - A19
Q0 - Q14
Q15 /A-1
Pin Function
Address Inputs
Data Outputs
Output 15(Word mode)/
LSB Address(Byte mode)
BHE
CE
OE
VCC
VSS
N.C
Word/Byte selection
Chip Enable
Output Enable
Power
Ground
No Connection
Q7/Q15
A18 1
A17 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
CE 11
VSS 12
OE 13
Q0 14
Q8 15
Q1 16
Q9 17
Q2 18
Q10 19
Q3 20
Q11 21
DIP
42 A19
N.C 1
41 A8
A18 2
40 A9
A17 3
39 A10
A7 4
38 A11
A6 5
37 A12
A5 6
36 A13
A4 7
35 A14
A3 8
34 A15
A2 9
33 A16
A1 10
32 BHE
A0 11
31 VSS CE 12
30 Q15/A-1 VSS 13
29 Q7
OE 14
28 Q14
Q0 15
27 Q6
Q8 16
26 Q13
Q1 17
25 Q5
24 Q12
23 Q4
22 VCC
Q9 18
Q2 19
Q10 20
Q3 21
Q11 22
SOP
44 N.C
43 A19
42 A8
41 A9
40 A10
39 A11
38 A12
37 A13
36 A14
35 A15
34 A16
33 BHE
32 VSS
31 Q15/A-1
30 Q7
29 Q14
28 Q6
27 Q13
26 Q5
25 Q12
24 Q4
23 VCC
K3N5V(U)1000F-DC
K3N5V(U)1000F-GC
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K3N5V1000F-DC electronic component. |
Information | Total 3 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ K3N5V1000F-DC.PDF Datasheet ] |
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Featured Datasheets
Part Number | Description | MFRS |
K3N5V1000F-DC | The function is 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM. Samsung Semiconductor | |
K3N5V1000F-DGC | The function is 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM. Samsung Semiconductor | |
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