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PDF APM9935K Data sheet ( Hoja de datos )

Número de pieza APM9935K
Descripción Dual P-Channel Enhancement Mode MOSFET
Fabricantes Anpec Electronics Coropration 
Logotipo Anpec Electronics Coropration Logotipo



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No Preview Available ! APM9935K Hoja de datos, Descripción, Manual

APM9935K
Dual P-Channel Enhancement Mode MOSFET
Features
Pin Description
-20V/-6A ,
RDS(ON)=30m(typ.) @ VGS=-4.5V
RDS(ON)=38m(typ.) @ VGS=-2.5V
Super High Dense Cell Design
www.DataSheet4U.com Reliable and Rugged
Lead Free Available (RoHS Compliant)
Applications
D1
D1
D2
D2
S1
G1
S2
G2
Top View of SOP 8
(1) (3)
S1 S2
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
(2)
G1
(4)
G2
D1 D1
(7) (8)
D2 D2
(5) (6)
P-Channel MOSFET
Ordering and Marking Information
APM9935
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM9935 K :
APM9935
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1
www.anpec.com.tw

1 page




APM9935K pdf
APM9935K
Typical Characteristics (Cont.)
www.DataSheet4U.com
Output Characteristics
20
V = -3, -4, -5, -6, -7, -8, -9, -10V
18 GS
16
14
-2V
12
10
8
6
4 -1.5V
2
0
0 2 4 6 8 10
-VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
60
55
50
45
V = -2.5V
GS
40
35
V = -4.5V
30 GS
25
20
15
10
0 4 8 12 16 20
-ID - Drain Current (A)
Transfer Characteristics
20
18
16
14
12
10
8 T =125oC
j
6
4 T =25oC
j
2
T =-55oC
j
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
2.00
1.75
I
DS
=
-250µA
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50 -25 0 25 50 75 100 125
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
5
www.anpec.com.tw

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