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PDF APM9932C Data sheet ( Hoja de datos )
| Número de pieza | APM9932C | |
| Descripción | Dual Enhancement Mode MOSFET | |
| Fabricantes | Anpec Electronics Coropration | |
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APM9932/C
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
• N-Channel
20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V
RDS(ON)=17mΩ(typ.) @ VGS=4.5V
• P-Channel
www.DataSheet4U.com -20V/-6A, RDS(ON)=30mΩ(typ.) @ VGS=-4.5V
RDS(ON)=45mΩ(typ.) @ VGS=-2.5V
• Super High Dense Cell Design for Extremely
Low RDS(ON)
• Reliable and Rugged
• SO-8 Package
Pin Description
APM9932
APM9932C
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
SO-8
S1 1
G1 2
S2 3
G2 4
8D
7D
6D
5D
SO-8
D1 D1
D
G1 G1 G2
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
S1
N-Channel MOSFET
S2
G2
S1 S2
N- and P-Channel
MOSFET
D2 D2
P-Channel MOSFET
Ordering and Marking Information
APM9932/C
Handling Code
Temp. Range
Package Code
Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150°C
Handling Code
TR : Tape & Reel
APM9932/C K :
APM9932/C
XXXXX
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
1
www.anpec.com.tw
1 page  
APM9932/C
Typical Characteristics (Cont.)
N-Channel
www.DataSheet4U.com
On-Resistance vs. Gate-to-Source Voltage
0.16
ID=15A
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
VGS=10V
1.8 ID=15A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
10
VDS=10V
ID=6A
8
Gate Charge
6
4
2
0
0 5 10 15 20 25 30
QG - Gate Charge (nC)
Capacitance
1800
Frequency=1MHz
1500
1200
Ciss
900
600
Coss
300
Crss
0
0 5 10 15 20
VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
5
www.anpec.com.tw
5 Page 
APM9932/C
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
www.DataSheet4U.com
Peak temperature
Pre-heat temperature
183°C
Classification Reflow Profiles
Time
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
Preheat temperature 125 ± 25°C)
120 seconds max
Temperature maintained above 183°C
60 – 150 seconds
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
Time 25°C to peak temperature
6 minutes max.
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
11
www.anpec.com.tw
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet APM9932C.PDF ] | |
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