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ON1004 Datasheet PDF - Panasonic Semiconductor

Part Number ON1004
Description Transmissive Photosensors
Manufacturers Panasonic Semiconductor 
Logo Panasonic Semiconductor Logo 



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ON1004 datasheet, circuit
Transmissive Photosensors (Photo lnterrupters)
CNA1302K (ON1004)
Photo lnterrupter
For contactless SW, object detection
Overview
Unit: mm
A Slit width
(0.3)
CNA1302K is an ultraminiature, highly reliable transmissive
photosensor in which a high efficiency GaAs infrared light emitting
diode chip and a high sensitivity Si phototransistor chip are integrated
in a double molded resin package.
Features
Ultraminiature: 4.2 mm × 5.0 mm (height: 5.2 mm)
Fast response:
www.DataSheeHt4iUgh.clyomprecise
tr , tf = 35 µs (typ.)
position detection:
0.15
mm
Gap width: 2.0 mm
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Input (Light Reverse voltage
emitting diode) Forward current
Power dissipation *1
Output (Photo Collector-emitter voltage
transistor) (Base open)
VR
IF
PD
VCEO
6
50
75
35
Unit
V
mA
mW
V
A'
5.0 SEC. A-A'
1.5 2.0 1.5
Device
center
4.2
(C0.5)
Gate the rest
0.3 max.
(C0.3)
2-0.25
+0.1
φ1.5 -0
2-0.5
*3.8 *2.54
1: Anode
13
2: Cathode
3: Collector
24
4: Emitter
PISMR104-003 Package
(Note) 1. Tolerance unless otherwise specified is ±0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
4. Burrs should be less than 0.15 mm
Emitter-collector voltage VECO
(Base open)
6
V
Collector current
IC 20 mA
Collector power dissipation *2 PC
75 mW
Temperature Operating ambient temperature Topr 25 to +85 °C
Storage temperature
Tstg 40 to +100 °C
Note) *1: Input power derating ratio is 1.0 mW/°C at
Ta 25°C.
*2: Output power derating ratio is 1.0 mW/°C at
Ta 25°C.
Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Input Forward voltage
VF
characteristics Reverse current
IR
Output
Collector-emitter cutoff current ICEO
characteristics (Base open)
Transfer Collector current
IC
characteristics Collector-emitter saturation voltage VCE(sat)
Rise time *
tr
Fall time *
tf
IF = 20 mA
VR = 3 V
VCE = 20 V
VCE = 5 V, IF = 5 mA
IF = 10 mA, IC = 40 µA
VCC = 5 V, IC = 0.1 mA
RL = 1 000
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. *: Switching time measurement circuit
Min Typ Max Unit
1.2 1.4 V
10 µA
100 nA
100 400 µA
0.4 V
35 µs
35 µs
Sig. in
50
VCC
Sig. out
RL
(Input pulse)
(Output pulse)
tr
tr : Rise time
90% tf : Fall time
10%
tf
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00022BED
1

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