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PDF AO4410 Data sheet ( Hoja de datos )
| Número de pieza | AO4410 | |
| Descripción | 30V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO4410
30V N-Channel MOSFET
General Description
The AO4410 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity,
body diode characteristics and ultra-low gate
resistance. This device is ideally suited for use as a
low side switch in Notebook CPU core power
conversion.
Product Summary
VDS (V) = 30V
ID = 18A
(VGS = 10V)
RDS(ON) < 5.5mΩ (VGS = 10V)
RDS(ON) < 6.2mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
D
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation TA=70°C
Avalanche Current B
Repetitive avalanche energy 0.3mH B
PD
IAR
EAR
Junction and Storage Temperature Range TJ, TSTG
G
Maximum
30
±12
18
15
80
3
2.1
30
135
-55 to 150
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
Vgs
+
VDC Vds
DUT -
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Vgs
Resistive Switching Test Circuit & Waveforms
RL
Vds
+
DUT VDC Vdd
-
Vgs
t d(on) t r
t on
t d(off)
tf
t off
Charge
90%
10%
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LI AR
Vds
Vgs +
VDC Vdd
- Id
DUT
Vgs
Vds +
Vds -
Isd
Vgs
Ig
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
DUT
Vgs
L
Isd IF
trr
dI/dt
+
VDC Vdd
IRM
- Vds
BVDSS
IAR
Vdd
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO4410.PDF ] | |
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