PDF MRF6VP2600HR6 Data sheet ( Hoja de datos )

Número de pieza	MRF6VP2600HR6
Descripción	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Fabricantes	Freescale Semiconductor
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No Preview Available ! Freescale Semiconductor ‘Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications. • TPInyoppuutict=aSl1iDg2n5VaBWl TPaAtOtRsFAD=vM9g..3P, [email protected]%z: ,VCPDhrDoab=nan5be0illitVByoaolntnsd,wCIDiCdQtDh=F=.276.0601mMAH,z, Power Gain — 25 dB Drain Efficiency — 28.5% ACPR @ 4 MHz Offset — - 61 dBc @ 4 kHz Bandwidth • CPTyoypuctilce=a=l6P020u0l%sWeadttPsePrfeoarkm,afn=ce2:2V5 DMDH=z,5P0uVlsoeltsW, IiDdQth = = 2600 mA, 100 μsec, Duty www.DataSheet4U.comPDorawinerEGffiaciinen—cy2—5.35d9B% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak Power, Pulse Width = 100 μsec, Duty Cycle = 20% Features • Integrated ESD Protection • Excellent Thermal Stability • Designed for Push - Pull Operation • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. Document Number: MRF6VP2600H Rev. 1, 7/2008 MRF6VP2600HR6 10 - 250 MHz, 600 W, 50 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 PART IS PUSH - PULL RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics VDSS VGS Tstg TC TJ - 0.5, +110 - 6.0, +10 - 65 to +150 150 200 Vdc Vdc °C °C °C Characteristic Symbol Value (1,2) Unit Thermal Resistance, Junction to Case Case Temperature 99°C, 125 W CW RθJC 0.20 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF6VP2600HR6 1 1 page 1000 Coss 100 10 Crss TYPICAL CHARACTERISTICS 100 Ciss Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 TJ = 200_C TJ = 175_C TJ = 150_C 1 0 www.DataSheet4U.com 10 20 30 40 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 50 Figure 4. Capacitance versus Drain - Source Voltage TC = 25_C 1 1 10 100 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 5. DC Safe Operating Area 1000 26.5 80 Gps 26 70 25.5 VDD = 50 Vdc, IDQ = 2600 mA 25 f = 225 MHz 24.5 Pulse Width = 100 μsec Duty Cycle = 20% 24 ηD 60 50 40 30 23.5 20 23 10 22.5 10 0 100 1000 Pout, OUTPUT POWER (WATTS) PULSED Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power 64 P3dB = 59.7 dBm (938 W) 62 P2dB = 59.1 dBm (827 W) 60 P1dB = 53.3 dBm (670 W) 58 Ideal Actual 56 54 VDD = 50 Vdc, IDQ = 2600 mA, f = 225 MHz Pulse Width = 12 μsec, Duty Cycle = 1% 52 27 28 29 30 31 32 33 34 35 36 37 38 Pin, INPUT POWER (dBm) Figure 7. Pulsed CW Output Power versus Input Power 26 25 50 V 24 45 V 23 VDD = 50 Vdc IDQ = 2600 mA 22 f = 225 MHz Pulse Width = 100 μsec Duty Cycle = 20% 21 0 100 200 300 40 V 35 V VDD = 30 V 400 500 600 Pout, OUTPUT POWER (WATTS) PULSED Figure 8. Pulsed Power Gain versus Output Power 700 28 80 27 TC = −30_C 26 25_C 25 85_C 24 VDD = 50 Vdc, IDQ = 2600 mA 23 f = 225 MHz Pulse Width = 100 μsec 22 Duty Cycle = 20% Gps ηD 70 60 50 40 30 20 21 10 10 100 1000 Pout, OUTPUT POWER (WATTS) PULSED Figure 9. Pulsed Power Gain and Drain Efficiency versus Output Power RF Device Data Freescale Semiconductor MRF6VP2600HR6 5 5 Page Table 6. MRF6VP2600HR6 Test Circuit Component Designations and Values — 88 - 108 MHz Part Description Part Number B1 95 Ω, 100 MHz Long Ferrite Bead 2743021447 C1 47 μF, 50 V Electrolytic Capacitor 476KXM050M C2 22 μF, 35 V Tantalum Capacitor T491X226K035AT C3 10 μF, 35 V Tantalum Capacitor T491D106K035AT C4, C9, C15 10K pF Chip Capacitors ATC200B103KT50XT C5, C16 20K pF Chip Capacitors ATC200B203KT50XT C6, C17 0.1 μF, 50 V Chip Capacitors CDR33BX104AKYS C7, C11 2.2 μF, 50 V Chip Capacitors C1825C225J5RAC C8 220 nF, 50 V Chip Capacitor C1812C224J5RAC C10, C13, C14 1000 pF Chip Capacitors ATC100B102JT50XT C12 33 pF Chip Capacitor ATC100B330JT500XT C18, C19, C20 www.DataSheet4U.cCo2m1 470 μF, 63 V Electrolytic Capacitors 2.2 μF, 100 V Chip Capacitor EKME630ELL471MK25S G2225X7R225KT3AB C22, C23 120 pF, Chip Capacitors ATC100B121JT500XT C24 150 pF Chip Capacitor ATC100B151JT500XT C25 100 pF Chip Capacitor ATC100B101JT500XT C26 15 pF Chip Capacitor ATC100B150JT500XT J1, J2 Jumpers from PCB to T1 & T2 Copper Foil L1 82 nH Inductor 1812SMS - 82NJ L2 8 Turns, #20 AWG ID = 0.125″ Inductor, Hand Wound Copper Wire L3 120 nH Inductor 1812SMS - R12J L4, L5 12.5 nH 4 Turn Inductor A04T L6* 9 Turns, #18 AWG Inductor, Hand Wound Copper Wire R1 20 Ω, 3 W Axial Leaded Resistor 5093NW20R00J T1 Balun Transformer TUI - 9 T2 Balun Transformer TUO - 9 *L6 is wrapped around R1. Manufacturer Fair - Rite Illinois Cap Kemet Kemet ATC ATC AVX Kemet Kemet ATC ATC MultiComp ATC ATC ATC ATC ATC CoilCraft CoilCraft CoilCraft Vishay Comm Concepts Comm Concepts RF Device Data Freescale Semiconductor MRF6VP2600HR6 11 11 Page

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Número de pieza	Descripción	Fabricantes
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