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What is H7N0608FM?

This electronic component, produced by the manufacturer "Renesas Technology", performs the same function as "Silicon N Channel MOS FET High Speed Power Switching".


H7N0608FM Datasheet PDF - Renesas Technology

Part Number H7N0608FM
Description Silicon N Channel MOS FET High Speed Power Switching
Manufacturers Renesas Technology 
Logo Renesas Technology Logo 


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Total 10 Pages



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H7N0608FM
Silicon N Channel MOS FET
Power Switching
www.DataSheet4U.com Features
Low on-resistance
RDS(on) = 6.5 mtyp.
Low drive current
4.5 V gate drive device can be driven from 5 V source
Outline
TO-220FM
REJ03G0165-0100Z
Rev.1.00
Dec.04.2003
D
G
S
123
1. Gate
2. Drain
3. Source
Rev.1.00, Dec.04.2003, page 1 of 9

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H7N0608FM equivalent
H7N0608FM
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
ID = 50 A
300
www.DataSheet4U.com
200
100
20 A
10 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10 VGS = 4.5 V
10 V
3
1
1 3 10 30 100 300 1000
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
12 50 A
10, 20 A
8 4.5 V
4 VGS = 10 V 10, 20, 50 A
0
–50 –25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
300
100
Forward Transfer Admittance vs.
Drain Current
VDS = 10 V
Pulse Test
Tc = –40°C
30
25°C
10
150°C
3
1
0.3
0.10.1
0.3 1 3 10 30
Drain Current ID (A)
100
Rev.1.00, Dec.04.2003, page 5 of 9


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for H7N0608FM electronic component.


Information Total 10 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
H7N0608FMThe function is Silicon N Channel MOS FET High Speed Power Switching. Renesas TechnologyRenesas Technology

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