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What is H7N0607DL?

This electronic component, produced by the manufacturer "Renesas Technology", performs the same function as "Silicon N Channel MOS FET High Speed Power Switching".


H7N0607DL Datasheet PDF - Renesas Technology

Part Number H7N0607DL
Description Silicon N Channel MOS FET High Speed Power Switching
Manufacturers Renesas Technology 
Logo Renesas Technology Logo 


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H7N0607DL, H7N0607DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 26 mtyp.
www.DataSheet4U.cLoomw drive current.
Capable of 4.5 V gate drive
Outline
REJ03G0124-0300
Rev.3.00
Jan.27.2005
PRSS0004ZD-B
PRSS0004ZD-C
(Previous code: DPAK(L)-2) (Previous code: DPAK-(S))
D4
4
1. Gate
2. Drain
G 3. Source
12 3
4. Drain
S
12 3
H7N0607DS
H7N0607DL
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IAP Note3
EAR Note3
PchNote2
Tch
Tstg
Rating
60
±20
20
80
20
8
5.48
25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mj
W
°C
°C
Rev.3.00, Jan.27.2005, page 1 of 8

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H7N0607DL equivalent
H7N0607DL, H7N0607DS
Reverse Drain Current vs.
Source to Drain Voltage
25
10 V
20
15
5V
Maximum Avalanche Energy vs.
Channel Temperature Derating
8.0
IAP = 8 A
VDD = 25V
6.4 duty < 0.1 %
Rg > 50
4.8
10 3.2
www.DataSheet4U.com
VGS = 0, –5 V
5
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
1.6
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
10
D=1
Normalized Transient Thermal Impedance vs. Pulse Width
Tc = 25°C
3 0.5
0.2
1
0.1
0.3 0.05
0.02
0.1 0.01
0.03
0.01
10 µ
100 µ
θch - c(t) = γs (t) • θch - c
θch - c = 3.125°C/ W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Vin
15 V
Avalanche Test Circuit
V DS
Monitor
Rg
50
L
I AP
Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1
2
• L • I AP2
VDSS
VDSS – V DD
I AP
ID
V(BR)DSS
VDS
VDD
0
Rev.3.00, Jan.27.2005, page 5 of 8


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for H7N0607DL electronic component.


Information Total 9 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
H7N0607DLThe function is Silicon N Channel MOS FET High Speed Power Switching. Renesas TechnologyRenesas Technology
H7N0607DSThe function is Silicon N Channel MOS FET High Speed Power Switching. Renesas TechnologyRenesas Technology

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