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PDF H7N0603DL Data sheet ( Hoja de datos )
| Número de pieza | H7N0603DL | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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H7N0603DL, H7N0603DS
Silicon N Channel MOS FET
High speed power Switching
Features
• Low on - resistance
RDS (on) = 11 mΩ typ.
www.DataSheet•4U.cLoomw drive current
• Capable of 4.5 gate drive
Outline
REJ03G0123-0200
Rev.2.00
Jan.26.2005
PRSS0004ZD-B
PRSS0004ZD-C
(Previous code: DPAK(L)-2) (Previous code: DPAK-(S))
D4
4
1. Gate
2. Drain
3. Source
G
12 3
4. Drain
H7N0603DS
S 12 3
H7N0603DL
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
3. Tch = 25°C, Rg ≥ 50Ω
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IAPNote3
EARNote3
PchNote2
Tch
Tstg
Ratings
60
±20
30
120
30
25
53.6
40
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.2.00, Jan.26.2005, page 1 of 8
1 page  
H7N0603DL, H7N0603DS
Reverse Drain Current vs.
Source to Drain Voltage
50
10 V
40
30
5V
20
VGS = 0, –5 V
10
www.DataSheet4U.com
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
80
IAP = 25 A
VDD = 25 V
64 duty < 0.1 %
Rg > 50 Ω
48
32
16
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3 0.2
0.1
0.1 0.05
0.02
0.03 01.0s1hot
0.01
10 µ
100 µ
θch - c(t) = γs (t) • θch - c
θch - c = 3.125°C/ W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Vin
15 V
Avalanche Test Circuit
V DS
Monitor
Rg
50 Ω
L
I AP
Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1
2
• L • I AP2•
VDSS
VDSS – V DD
I AP
ID
V(BR)DSS
VDS
VDD
0
Rev.2.00, Jan.26.2005, page 5 of 8
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet H7N0603DL.PDF ] | |
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