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What is H7N0312LD?

This electronic component, produced by the manufacturer "Renesas Technology", performs the same function as "Silicon N Channel MOS FET High Speed Power Switching".


H7N0312LD Datasheet PDF - Renesas Technology

Part Number H7N0312LD
Description Silicon N Channel MOS FET High Speed Power Switching
Manufacturers Renesas Technology 
Logo Renesas Technology Logo 


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Total 8 Pages



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No Preview Available ! H7N0312LD datasheet, circuit

H7N0312LD, H7N0312LS, H7N0312LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1128-0300
(Previous: ADE-208-1572A)
Rev.3.00
Apr 07, 2006
Features
Low on-resistance
www.DataSheet4U.cRoDmS (on) = 2.6 mtyp.
Low drive current
4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
123
H7N0312LD
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
1. Gate
2. Drain
3. Source
4. Drain
H7N0312LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
D
G
123
H7N0312LM
S
Rev.3.00 Apr 07, 2006 page 1 of 7

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H7N0312LD equivalent
H7N0312LD, H7N0312LS, H7N0312LM
Reverse Drain Current vs.
Souece to Drain Voltage
100
10 V
80
VGS = 0 V
5V
60
40
www.DataSheet4U.com
20
Pulse Test
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 1.0°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Rev.3.00 Apr 07, 2006 page 5 of 7


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for H7N0312LD electronic component.


Information Total 8 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
H7N0312LDThe function is Silicon N Channel MOS FET High Speed Power Switching. Renesas TechnologyRenesas Technology
H7N0312LMThe function is Silicon N Channel MOS FET High Speed Power Switching. Renesas TechnologyRenesas Technology
H7N0312LSThe function is Silicon N Channel MOS FET High Speed Power Switching. Renesas TechnologyRenesas Technology

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