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What is P5NK80Z?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "STP5NK80Z".


P5NK80Z Datasheet PDF - STMicroelectronics

Part Number P5NK80Z
Description STP5NK80Z
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STP5NK80Z
STP5NK80ZFP
N-channel 800V - 1.9- 4.3A - TO-220/TO-220FP
Zener-protected SuperMESH™ Power MOSFET
General features
www.DataSheet4U.com Type
STP5NK80Z
STP5NK80ZFP
VDSS
(@Tjmax)
800 V
800 V
RDS(on)
< 2.4
< 2.4
ID
4.3 A
4.3 A
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
Switching application
TO-220
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STP5NK80Z
STP5NK80ZFP
Marking
P5NK80Z
P5NK80ZFP
Package
TO-220
TO-220FP
Packaging
Tube
Tube
August 2006
Rev 4
1/15
www.st.com
15

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P5NK80Z equivalent
STP5NK80Z - STP5NK80ZFP
2 Electrical characteristics
Electrical characteristics
www.DataSheet4U.com
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
Tc = 125°C
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VGS = 0)
VGS = ± 20V
Gate threshold voltage
VDS = VGS, ID = 100µA
Static drain-source on
resistance
VGS = 10V, ID = 2.15 A
Min. Typ. Max. Unit
800 V
1 µA
50 µA
±10 µA
3 3.75 4.5 V
1.9 2.4
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance VDS =15V, ID = 2.15A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
4.25
910
98
20
S
pF
pF
pF
Cosseq(2).
Equivalent output
capacitance
VGS=0, VDS =0V to 400V
40
pF
td(on)
tr
td(off)
tr
Qg
Qgs
Qgd
td(Voff)
tr
Turn-on delay time
Rise time
Turn-on delay time
fall time
Total gate charge
Gate-source charge
Gate-drain charge
Off-voltage rise time
Fall time
Cross-over time
VDD=400 V, ID= 2 A,
RG=4.7Ω, VGS=10V
(see Figure 18)
VDD=640V, ID = 4.3A
VGS =10V
VDD=640 V, ID= 4.3 A,
RG=4.7Ω, VGS=10V
(see Figure 20)
18
25
45
30
32.4 45.5
5
18.5
22
10
32
ns
ns
ns
ns
nC
nC
nC
ns
ns
ns
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
5/15


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