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Número de pieza | SSN1N45B | |
Descripción | 450V N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! SSN1N45B
450V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
www.DataSheet4U.com planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic ballasts based on half bridge
configuration.
Features
• 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V
• Low gate charge ( typical 6.5 nC)
• Low Crss ( typical 6.5 pF)
• 100% avalanche tested
• Improved dv/dt capability
• Gate-Source Voltage ± 50V guaranteed
D
!
GDS
TO-92
SSN Series
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C)
Power Dissipation (TL = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
SSN1N45B
450
0.5
0.32
4.0
± 50
108
0.5
0.25
5.5
0.9
2.5
0.02
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJL
RθJA
Parameter
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
(Note 6a)
(Note 6b)
Typ
--
--
Max
50
140
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, November 2002
1 page Gate Charge Test Circuit & Waveform
12V
www.DataSheet4U.com
50KΩ
200nF
300nF
VGS
Same Type
as DUT
VGS
10V
VDS
Qgs
DUT
3mA
Qg
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
©2002 Fairchild Semiconductor Corporation
Rev. A, November 2002
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SSN1N45B.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSN1N45B | 450V N-Channel MOSFET | Fairchild Semiconductor |
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