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PDF K3918 Data sheet ( Hoja de datos )
| Número de pieza | K3918 | |
| Descripción | MOSFET ( Transistor ) - 2SK3918 | |
| Fabricantes | NEC | |
| Logotipo |  |
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 1. 25V, 48A, N-Ch, Power MOSFET  Hay una vista previa y un enlace de descarga de K3918 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3918
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3918 is N-channel MOS FET device that
www.DataSheet4U.cfoematures a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3918
2SK3918-ZK
TO-251 (MP-3)
TO-252 (MP-3ZK)
FEATURES
• Low on-state resistance
RDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 24 A)
• Low Ciss: Ciss = 1300 pF TYP.
• 5 V drive available
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±48
±192
Total Power Dissipation (TC = 25°C)
PT1 29
Total Power Dissipation
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
IAS 22
EAS 48
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17077EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
15
10
VGS = 10 V
www.DataSheet4U.com
5
0
-100
ID = 24 A
Pulsed
-50 0 50 100 150
Tch - Channel Temperature - °C
200
1000
100
10
SWITCHING CHARACTERISTICS
VDD =12.5 V
VGS = 10 V
RG = 10 Ω
td(off)
tf
tr
td(on)
1
0.1
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10
1 0V
0.1
Pulsed
0.01
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
2SK3918
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
VGS = 0 V
f = 1 MHz
100
0.01 0.1
Coss
Crss
1 10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30 12
ID = 48 A, 42 A (at VDD = 5 V)
25 VDD = 20 V
12.5 V
20 5 V
10
8
15
VGS
6
10 4
5 VDS
2
00
0 10 20 30
QG - Gate Charge - nC
1000
100
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/µs
VGS = 0 V
10
1
1 10 100
IF - Diode Forward Current - A
Data Sheet D17077EJ3V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3918.PDF ] | |
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