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PDF XRF286 Data sheet ( Hoja de datos )
| Número de pieza | XRF286 | |
| Descripción | MRF286 | |
| Fabricantes | Motorola Semiconductors | |
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Hay una vista previa y un enlace de descarga de XRF286 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
from WISD RF Marketing
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in class A and class AB for PCN–PCS/cellular radio
and WLL applications.
• Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 9.5 dB
Intermodulation Distortion — –28 dBc
• Typical Two–Tone Performance at 2000 MHz, 26 Volts
www.DataSheet4U.coOmutput Power — 60 Watts (PEP)
Power Gain — 10.5 dB
Efficiency — 32%
Intermodulation Distortion — –30 dBc
• S–Parameter Characterization at High Bias Levels
• Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 60 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
MRF286
MRF286S
Order sample parts by XRF286,S
PILOT PRODUCTION PROTOTYPE
2000 MHz, 60 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465–04, STYLE 1
(MRF286)
CASE 465A–04, STYLE 1
(MRF286S)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
± 20
240
1.37
– 65 to +150
200
Max
0.73
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
“PILOT PRODUCTION PROTOTYPE (“X” Status)” devices are preproduction products and may not be released or produced in volume.
“X” status devices are for engineering evaluation and should not be used for production. Specifications are subject to change without notice.
REV 3
©MMOotTorOolRa,OInLc.A20R00F DEVICE DATA
MRF286 MRF286S
1
1 page  
www.DataSheet4U.com
Zo = 1 Ω
Zin
f = 1.8 GHz
f = 2.4 GHz
ZOL*
f = 2.4 GHz
f = 1.8 GHz
VDD = 26 V, IDQ = 500 mA, Pout = 60 Watts (PEP)
f
MHz
Zin
Ω
ZOL*
Ω
1800
1.0 – j0.57
1.25 – j2.31
1900
1.19 – j0.005
1.35 – j2.0
2000
1.38 + j0.20
1.40 – j1.6
2100
1.75 + j0.47
1.60 – j1.7
2200
2300
2.40 + j0.80
4.90 + j1.20
1.80 – j2.0
1.85 – j2.1
2400
7.50 – j1.85
1.90 – j2.18
Zin = Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load
impedance at given output power, voltage,
IMD, bias current and frequency.
Input
Matching
Network
Device
Under Test
Z in Z OL*
Figure 4. Series Large–Signal Device Impedances
Output
Matching
Network
MOTOROLA RF DEVICE DATA
MRF286 MRF286S
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet XRF286.PDF ] | |
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