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PDF C2335F Data sheet ( Hoja de datos )
| Número de pieza | C2335F | |
| Descripción | KSC2335F | |
| Fabricantes | Fairchild Semiconductor | |
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KSC2335F
High Speed, High Voltage Switching
• Industrial Use
www.DataSheet4U.com NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP *Collector Current (Pulse)
IB Base Current
PC Collector Dissipation (TC=25°C)
TJ Junction Temperature
TSTG
Storage Temperature
* PW≤300µs, Duty Cycle≤10%
1 TO-220F
1.Base 2.Collector 3.Emitter
Value
500
400
7
7
15
3.5
40
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
VCEX(sus)1
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
VCEX(sus)2 Collector-Emitter Sustaining Voltage
ICBO
ICER
Collector Cut-off Current
Collector Cut-off Current
ICEX1
ICEX2
Collector Cut-off Current
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
hFE3
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
tON Turn ON Time
tSTG
Storage Time
tF Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
IC=3A, IB1=0.6A, L = 1mH
IC=3A,IB1=-IB2=0.6A
VBE(off)=-5V, L = 180µH, Clamped
IC=6A, IB1=2A, IB2=-0.6A
VBE(off)=-5V, L = 180µH, Clamped
VCE=400V, IE = 0
VCE=400V, RBE = 51Ω @
TC = 125°C
VCE=400V, VBE (off) = -1.5V
VCE=400V, VBE(off) = -1.5V @
Ta=125°C
VEB=5V, IC = 0
VCE=5V, IC = 0.1A
VCE=5V, IC = 1A
VCE=5V, IC=3A
IC=3A, IB=0.6A
IC=3A, IB=0.6A
VCC=150V, IC=3A
IB1=-IB2=0.6A
RL=50Ω
Min.
400
450
Max.
Units
V
V
400 V
10 µA
1 mA
10 µA
1 mA
10 µA
20
20 80
10
1V
1.2 V
1 µs
2.5 µs
1 µs
hFE Classification
Classification
hFE1
R
20 ~ 40
O
30 ~ 60
Y
40 ~ 80
©2000 Fairchild Semiconductor International
Rev. A, February 2000
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet C2335F.PDF ] | |
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