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PDF K3397 Data sheet ( Hoja de datos )
| Número de pieza | K3397 | |
| Descripción | MOSFET ( Transistor ) - 2SK3397 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K3397 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK3397
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3397
Relay Drive and DC-DC Converter Applications
Motor Drive Applications
Unit: mm
z Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.)
z High forward transfer admittance: |Yfs| = 110 S (typ.)
z Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
www.DataSheetz4U.coEmnhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
70
210
125
273
70
12.5
150
−55 to150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Rth (ch-c)
1.0 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 40 μH, IAR = 70 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
4
3
1 2006-11-16
1 page  
www.DataSheet4U.com
rth − tw
10
2SK3397
1 Duty=0.5
0.1
0.01
10μ
0.2
0.1
0.01
0.05
0.02
100μ
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 1.0°C/W
1m
10m
100m
Pulse width tw (s)
1
10
SAFE OPERATING AREA
1000
ID max (pulse) *
100 ID max (continuous)
DC OPEATION
10 Tc = 25°C
100 μs *
1 ms *
1
※ Single pulse
Ta=25℃
Curves must be derated
linearly with increase in
temperature.
0. 1
0. 1
1
VDSS max
10
Drain-source voltage VDS (V)
100
EAS – Tch
500
400
300
200
100
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG=25 Ω
VDD = 25 V, L = 40μH
Wave form
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2006-11-16
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3397.PDF ] | |
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