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Datasheet H45N03E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | H45N03E | N-Channel Enhancement-Mode MOSFET HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200518 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5
H45N03E
N-Channel Enhancement-Mode MOSFET (25V, 45A)
H45N03E Pin Assignment
Tab
Features
• RDS(on)=15mΩ@VGS=10V, ID=25A • RDS(on)=20mΩ@VGS=4.5V, ID=25A www.DataShee |  Hi-Sincerity Mocroelectronics | mosfet |
H45 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | H45N03E | N-Channel Enhancement-Mode MOSFET HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200518 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5
H45N03E
N-Channel Enhancement-Mode MOSFET (25V, 45A)
H45N03E Pin Assignment
Tab
Features
• RDS(on)=15mΩ@VGS=10V, ID=25A • RDS(on)=20mΩ@VGS=4.5V, ID=25A www.DataShee Hi-Sincerity Mocroelectronics mosfet | | |
| 2 | H45TBXX | PHASE CONTROL THYRISTOR
PHASE CONTROL THYRISTOR H45TBXX
Symbol Characteristics Conditions TJ (0C) Value Unit
BLOCKING PARAMETERS VRRM VDRM IRRM IDRM dV/dT Repetitive peak reverse voltage Repetitive peak off-stage voltage Repetitive peak reverse current Repetitive peak off-state current Rep. rate of ch  Hind Rectifiers thyristor | |
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