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What is H15R1202?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "Reverse Conducting IGBT".


H15R1202 Datasheet PDF - Infineon

Part Number H15R1202
Description Reverse Conducting IGBT
Manufacturers Infineon 
Logo Infineon Logo 


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IHW15N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
www.DataSheet4U.coCmomplete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
Type
VCE
IC VCE(sat),Tj=25°C Tj,max
Marking
IHW15N120R2 1200V 20A
1.5V
175°C H15R1202
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 1200V, Tj 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Mounting Torque
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
Ms
C
G
E
PG-TO-247-3-21
Package
PG-TO-247-3-21
Value
1200
30
15
45
45
30
15
45
50
130
120
±20
±25
357
-40...+175
-55...+175
260
0.6
Unit
V
A
V
W
°C
Nm
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 1 Feb. 06

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H15R1202 equivalent
IHW15N120R2
Soft Switching Series
40A
30A
www.DataSheet4U.com
20A
10A
VGE=20V
15V
13V
11V
9V
7V
0A
0V 1V 2V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
40A
VGE=20V
15V
30A 13V
11V
9V
20A 7V
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
40A
TJ=175°C
30A 25°C
20A
10A
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
IC=30A
2.0V
1.5V
1.0V
IC=15A
IC=7.5A
0.5V
0.0V
-50°C 0°C 50°C 100°C 150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE =15V)
Power Semiconductors
5
Rev. 1 Feb. 06


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for H15R1202 electronic component.


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H15R1202 datasheet


1. - 1200V, 15A, IGBT, Transistor

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Part NumberDescriptionMFRS
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