PDF STP5NK80ZFP Data sheet ( Hoja de datos )

Número de pieza	STP5NK80ZFP
Descripción	N-channel Power MOSFET
Fabricantes	STMicroelectronics
Logotipo
Hay una vista previa y un enlace de descarga de STP5NK80ZFP (archivo pdf) en la parte inferior de esta página. Total 15 Páginas
No Preview Available ! STP5NK80Z STP5NK80ZFP N-channel 800V - 1.9Ω - 4.3A - TO-220/TO-220FP Zener-protected SuperMESH™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STP5NK80Z STP5NK80ZFP 800 V 800 V < 2.4 Ω < 2.4 Ω 4.3 A 4.3 A www.DataShe■et41U00.c%omavalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application TO-220 3 2 1 TO-220FP Internal schematic diagram Order codes Part number STP5NK80Z STP5NK80ZFP Marking P5NK80Z P5NK80ZFP Package TO-220 TO-220FP Packaging Tube Tube August 2006 Rev 4 1/15 www.st.com 15 1 page STP5NK80Z - STP5NK80ZFP 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions www.DataSheet4U.com V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating, Tc = 125°C IGSS VGS(th) RDS(on) Gate body leakage current (VGS = 0) VGS = ± 20V Gate threshold voltage VDS = VGS, ID = 100µA Static drain-source on resistance VGS = 10V, ID = 2.15 A Min. Typ. Max. Unit 800 V 1 µA 50 µA ±10 µA 3 3.75 4.5 V 1.9 2.4 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) Ciss Coss Crss Forward transconductance VDS =15V, ID = 2.15A Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 4.25 910 98 20 S pF pF pF Cosseq(2). Equivalent output capacitance VGS=0, VDS =0V to 400V 40 pF td(on) tr td(off) tr Qg Qgs Qgd td(Voff) tr Turn-on delay time Rise time Turn-on delay time fall time Total gate charge Gate-source charge Gate-drain charge Off-voltage rise time Fall time Cross-over time VDD=400 V, ID= 2 A, RG=4.7Ω, VGS=10V (see Figure 18) VDD=640V, ID = 4.3A VGS =10V VDD=640 V, ID= 4.3 A, RG=4.7Ω, VGS=10V (see Figure 20) 18 25 45 30 32.4 45.5 5 18.5 22 10 32 ns ns ns ns nC nC nC ns ns ns 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 5/15 5 Page STP5NK80Z - STP5NK80ZFP 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com www.DataSheet4U.com 11/15 11 Page

Páginas	Total 15 Páginas
PDF Descargar	[ Datasheet STP5NK80ZFP.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
STP5NK80ZFP	N-channel Power MOSFET	STMicroelectronics
STP5NK80ZFP-H	TO-220FP Zener-protected SuperMESH Power MOSFET	ST Microelectronics

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar