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PDF IXSR40N60CD1 Data sheet ( Hoja de datos )
| Número de pieza | IXSR40N60CD1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS Corporation | |
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IGBT with Diode
ISOPLUS247TM
IXSR 40N60CD1
(Electrically Isolated Backside)
Short Circuit SOA Capability
VCES
IC25
VCE(SAT)
tfi(typ)
= 600 V
= 62 A
= 2.5 V
= 70 ns
Preliminary data
www.DataSheetS4Uym.cobmol
Test Conditions
VCES
V
CGR
VGES
VGEM
I
C25
IC90
I
CM
SSOA
(RBSOA)
tSC
(SCSOA)
PC
TJ
TJM
T
stg
VISOL
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MW
Continuous
Transient
T
C
= 25°C, limited by leads
TC = 90°C
T
C
= 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 30 mH
VGE= 15 V, VCE = 360 V, TJ = 125°C
RG = 22 W, non repetitive
TC = 25°C
50/60 Hz, RMS t = 1 min
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
PLUS247
Maximum Ratings
600
600
±20
±30
62
37
150
ICM = 80
@ 0.8 V
CES
10
V
V
V
V
A
A
A
A
ms
210
-55 ... +150
150
-55 ... +150
2500
300
W
°C
°C
°C
V~
°C
5g
Symbol
BVCES
V
GE(th)
I
CES
IGES
V
CE(sat)
Test Conditions
IC = 1 mA, VGE = 0 V
I = 4 mA, V = V
C CE GE
V = 0.8 • V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
I = I , V = 15 V
C T GE
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600
4
TJ = 150°C
V
7V
650 mA
5 mA
±100 nA
2.5 V
ISOPLUS 247TM (IXSR)
E 153432
G
C
E
Isolated backside*
G = Gate,
E = Emitter
C = Collector,
* Patent pending
Features
• DCB Isolated mounting tab
• Meets TO-247AD package Outline
• High current handling capability
• Latest generation HDMOSTM process
• MOS Gate turn-on
- drive simplicity
Applications
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• Easy assembly
• High power density
• Very fast switching speeds for high
frequency applications
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98673A (7/00)
1-2
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