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PDF 3DD13001 Data sheet ( Hoja de datos )
| Número de pieza | 3DD13001 | |
| Descripción | TRANSISTOR | |
| Fabricantes | Jiangsu Changjiang Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 3DD13001 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13001 TRANSISTOR NPN
FEATURES
Power dissipation
PCM : 1.25
www.DataSheetC4Uo.lcloemctor current
ICM : 0.2
Collector-base voltage
W Tamb=25
A
V(BR)CBO : 600 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
TO 92
1.BASE
2.COLLECTOR
3.EMITTER
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
Ic= 100 A IE=0
IC= 1 mA , IB=0
600
400
V
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 A IC=0
7
V
Collector cut-off current
Collector cut-off current
ICBO VCB= 600 V , IE=0
ICEO VCE= 400 V , IB=0
100 A
200 A
Emitter cut-off current
IEBO VEB= 7 V , IC=0
100 A
DC current gain
hFE 1
hFE 2
VCE= 20 V, IC= 20m A
VCE= 10V, IC= 0.25 m A
10
5
70
Collector-emitter saturation voltage
VCE(sat)
IC= 50mA, IB= 10 m A
0.5 V
Base-emitter saturation voltage
VBE(sat)
IC= 50 mA, IB= 10m A
1.2 V
Transition frequency
Fall time
Storage time
VCE= 20 V, IC=20mA
fT
f = 1MHz
8
tf
IC=50mA,
IB1=-IB2=5mA,
t S VCC=45V
MHz
0.3 s
1.5 s
CLASSIFICATION OF hFE(1)
Range 10-15 15-20 20-25
25-30
30-35
35-40
40-45
45-50
50-55
55-60
60-65
65-70
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 3DD13001.PDF ] | |
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