(PDF) MPS1201S-01 Datasheet - Integrated Gate Bipolar Transistor

Número de pieza	MPS1201S-01
Descripción	Integrated Gate Bipolar Transistor
Fabricantes	Mitsubishi Semiconductors
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No Preview Available ! MITMSIUTSBUISBHISI SHEI SMEICMOICNODNUDCUTOCTROSRS MPS12M0PS11S20-10S1-01 1 A1TMATOMSOPHSPEHRERAEBSAOBSLUOTLEUTTEYPTEYPPERPERSSEUSSRUERSEENSESNOSROR DESCRIPTION The MPS1201S is a hybrid IC with pressure sensor element, together forming a 1 atmosphere absolute type pressure sensor device. This includes the semiconductor pressure sensor ele- ment and an amplifier circuit. Therefore the MPS1201S does no require a complicated external adjustment circuit. FEATURES • Compact size, light weight • Built-in amplifier circuit, including temperature compensation www.DataSheet4U•.Wcoimde temperature compensation range : Ta = – 30 ~ 100°C APPLICATION Measurement of the atmosphere OUTLINE DRAWING 6 14.4 12 8 φ3 Unit : mm 1 φ1 E BLOCK DIAGRAM – + ABSOLUTE MAXIMUM RATINGS Symbol Parameter Pmax Maximum operating pressure VCC max Maximum operating voltage Tstg Storage temperature Conditions Ta = 25°C Ta = 25°C 0.5 1.8 VCC Vout GND Hybrid IC Ratings 202 (1520) 10 – 40~125 Units kPa·abs (mmHg·abs) V °C Sep. 2000 1 page

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PDF MPS1201S-01 Data sheet ( Hoja de datos )