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PDF STW80NE06-10 Data sheet ( Hoja de datos )
| Número de pieza | STW80NE06-10 | |
| Descripción | N - CHANNEL STripFET POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
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® STW80NE06-10
N - CHANNEL 60V - 0.0085Ω - 80A - TO-247
STripFET™ ” POWER MOSFET
T Y PE
V DSS
RDS(on)
ST W80NE06-10 60 V <0.01 Ω
www.DataSheet4Us.coTmYPICAL RDS(on) = 0.0085 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
ID
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™ ” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM ( •)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
July 1998
Value
Uni t
60 V
60 V
± 20
V
80 A
57 A
320 A
200
1.33
W
W/oC
7 V/ ns
-65 to 175
oC
175 oC
(1) ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STW80NE06-10
Normalized On Resistance vs Temperature
www.DataSheet4U.com
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STW80NE06-10.PDF ] | |
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| STW80NE06-10 | N - CHANNEL STripFET POWER MOSFET | STMicroelectronics |
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