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Datasheet S9014 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | S9014 | Pre-Amplifier / Low Level & Low Noise SS9014
SS9014
Pre-Amplifier, Low Level & Low Noise
• High total power dissipation. (PT=450mW) • High hFE and good linearity • Complementary to SS9015
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VC |  Fairchild Semiconductor | amplifier |
| 2 | S9014 | NPN Silicon Transistor 7
Semiconductor
STS9014
NPN Silicon Transistor
Description
• General purpose application • Switching application
Features
• Excellent hFE linearity : hFE(IC=0.1 mA) / hFE(IC=2 mA) = 0.95(Typ.) • Low noise : NF=10dB(Max.) at f=1KHz • Complementary pair with STS9015
Ordering Information |  AUK corp | transistor |
| 3 | S9014 | NPN General Purpose Transistors S9014
NPN General Purpose Transistors
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, |  Weitron Technology | transistor |
| 4 | S9014 | Silicon Epitaxial Planar Transistor BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z z z Complementary To S9015. Excellent HFE Linearity. Power dissipation.(PC=0.2W)
Production specification
S9014
Pb
Lead-free
APPLICATIONS
z Per-Amplifier low level & low noise. SOT-23
ORDERING INFORMATION
T |  Galaxy Semi | transistor |
| 5 | S9014 | Silicon Epitaxial Planar Transistor BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z z z Complementary To S9015. Excellent HFE Linearity. Power dissipation.(PC=0.2W)
Production specification
S9014
Pb
Lead-free
APPLICATIONS
z Per-Amplifier low level & low noise. SOT-23
ORDERING INFORMATION
T |  BL | transistor |
S90 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | S9004P2CT | 30A SCHOTTKY BARRIER RECTIFIER S9004P2CT
30A SCHOTTKY BARRIER RECTIFIER Features
· · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverter  Diodes Incorporated rectifier | | |
| 2 | S9005P2CT | 20A SCHOTTKY BARRIER RECTIFIER S9005P2CT
20A SCHOTTKY BARRIER RECTIFIER Features
· · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverter Diodes Incorporated rectifier | | |
| 3 | S9011 | NPN Transistor RoHS
S9011
S9011
F EATURE Pow er dissipation P CM:
TRANSISTOR (NPN)
TO-92
1 . EMITTER
2. BASE
0 .31 W (Tamb=25℃)
3. COLLECTOR
Co llector current I CM: 0 .03 A C ollector-base voltage V (BR)CBO: 30 V Operating and storage junction temperature range Tj, Tstg: - 55℃ to +150℃
E LECTRICAL C  WEJ transistor | | |
| 4 | S9011 | NPN Silicon Epitaxial Planar Transistor BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Collec tor Current.(IC= 30mA） z Power dissipation.(PC=200mW)
Production specification
S
9011
Pb
Lead-free
APPLICATIONS
z AM converter, AM/FM if amplifier general purpose transistor.
ORDERING INFORMATION
Type No. S 9011 M BL transistor | | |
| 5 | S9012 | TO-92 Plastic-Encapsulate Transistors ETC transistor | | |
| 6 | S9012 | PNP General Purpose Transistors S9012
PNP General Purpose Transistors
P b Lead(Pb)-Free
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA =25 C Junction T Weitron Technology transistor | | |
| 7 | S9012 | PNP Silicon Epitaxial Planar Transistor BL Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
FEATURES
z z z High Collector Current.(IC= -500mA） Complementary To S9013. Excellent HFE Linearity.
Production specification
S9012
Pb
Lead-free
APPLICATIONS
z High Collector Current.
SOT-23
ORDERING INFORMATION BL transistor | |
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