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Datasheet 29F160E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 29F160E | Boot Sector Flash Memory E ES S II
Excel Semiconductor inc.
ES29LV400E
4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
GENERAL FEATURES
• Single power supply operation - 2.7V -3.6V for read, program and erase operations
• Minimum 100,000 program/erase cycles per sector • 2 |  Excel Semiconductor | data |
29F Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 29F001TPC | MX29F001TPC
MX29F001T/B
1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES
5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current • Command register architectur  Macronix International data | | |
| 2 | 29F002 | 2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory M29F002BT M29F002BB, M29F002BNT
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs by Byte typical 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) �  STMicroelectronics data | | |
| 3 | 29F002 | 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory PRELIMINARY
Am29F002/Am29F002N
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements s High performance — Access  Advanced Micro Devices cmos | | |
| 4 | 29F002 | 2M (256K X 8) BIT FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20868-3E
FLASH MEMORY
CMOS
2M (256K × 8) BIT
MBM29F002TC-55/-70/-90/MBM29F002BC-55/-70/-90
s FEATURES
• • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Pinout and software compatible  Fujitsu Media Devices Limited data | | |
| 5 | 29F002 | 2M-BIT [256K x 8] CMOS FLASH MEMORY MX29F002/002N
2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES
• • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current Programming and erasing voltage 5V ± 10% Command register architecture - Byte Programming ( Macronix International cmos | | |
| 6 | 29F010 | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory FINAL
Am29F010
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements s High performance — 45 ns maximum access ti Advanced Micro Devices cmos | | |
| 7 | 29F010 | 1 Mbit 128Kb x8 / Uniform Block Single Supply Flash Memory M29F010B
1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory
PRELIMINARY DATA
s
SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8µs per Byte typical 8 UNIFORM 16 Kbytes MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Byte Prog STMicroelectronics data | |
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