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PDF P4NB80 Data sheet ( Hoja de datos )
| Número de pieza | P4NB80 | |
| Descripción | STP4NB80 | |
| Fabricantes | STMicroelectronics | |
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Hay una vista previa y un enlace de descarga de P4NB80 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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STP4NB80
® STP4NB80FP
N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
STP4NB80
800 V
3.3 Ω
4A
www.DataSheet4U.cSoTmP4NB80FP
800 V
3.3 Ω
4A
s TYPICAL RDS(on) = 3 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM(•)
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
September 2001
Value
STP4NB80 STP4NB80FP
800
800
± 30
4 4(*)
2.4 2.4(*)
16 16
100 35
0.8 0.28
4.5 4.5
2500
-65 to 150
150
(1) ISD ≤4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
V
V
V
A
A
A
W
W/oC
V/ns
V
oC
oC
1/9
1 page  
Gate Charge vs Gate-source Voltage
Capacitance Variations
STP4NB80/FP
www.DataSheet4U.com
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet P4NB80.PDF ] | |
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