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PDF 5SDD54N4000 Data sheet ( Hoja de datos )
| Número de pieza | 5SDD54N4000 | |
| Descripción | Rectifier Diode | |
| Fabricantes | ABB | |
| Logotipo |  |
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VRSM =
IF(AV)M =
IF(RMS) =
IFSM =
VF0 =
rF =
4000 V
5200 A
8200 A
85×103 A
0.8 V
0.086 mΩ
Rectifier Diode
5SDD 54N4000
• Patented free-floating silicon technology
• Very low on-state losses
www.DataShee•t4UO.copmtimum power handling capability
Doc. No. 5SYA1171-00 Dec. 03
Blocking
Maximum rated values 1)
Parameter
Symbol Conditions
Repetitive peak reverse voltage
VRRM
f = 50 Hz, tp = 10ms, Tj = 0...150°C
Non - repetitive peak reverse voltage VRSM f = 5 Hz, tp = 10ms, Tj = 0...150°C
Characteristic values
Parameter
Max. (reverse) leakage current
Symbol Conditions
IRRM
VRRM, Tj = 150°C
min
typ
Value
3600
4000
Unit
V
V
max Unit
400 mA
Mechanical data
Maximum rated values 1)
Parameter
Mounting force
Acceleration
Acceleration
Symbol Conditions
FM
a Device unclamped
a Device clamped
min
81
typ
90
max
108
50
100
Unit
kN
m/s2
m/s2
Characteristic values
Parameter
Symbol Conditions
min typ
Weight
m
Housing thickness
H FM = 90 kN, Ta = 25 °C
Surface creepage distance
DS
56
Air strike distance
Da
22
1) Maximum rated values indicate limits beyond which damage to the device may occur
max
2.8
35.9
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
1 page  
5SDD 54N4000
www.DataSheet4U.com
Fig. 6 Surge on-state current vs. pulse length. Half-
sine wave.
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
Fig. 8 Recovery charge vs. decay rate of on-state
current.
Fig. 9 Peak reverse recovery current vs. decay rate
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1171-00 Dec. 03
page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 5SDD54N4000.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| 5SDD54N4000 | Rectifier Diode | ABB |
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