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Datasheet D2646 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | D2646 | NPN Transistor, 2SD2646 Ordering number : ENN6922
2SD2646
NPN Triple Diffused Planar Silicon Transistor
2SD2646
Color TV Horizontal Deflection Output Applications
Features
High speed. High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). www.DataShee U . c o m of MBIT process. •t 4 Adoption |  Sanyo Semiconductor | data |
D26 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | D2603 | SILICON NPN TRANSISTOR 2SD2603(3DD2603)
硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途：用于一般功率输出放大。
Purpose: Power out amplifier applications.
特点：击穿电压高,饱和压降低。 Features: High VCEO,low V .CE(sat)
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号
�  FOSHAN BLUE ROCKET transistor | | |
| 2 | D2604 | NPN Transistor, 2SD2604 2SD2604
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2604
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
• •
High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.5 V (max)
Absolute Ma  Toshiba Semiconductor data | | |
| 3 | D2606 | Silicon NPN diffusion planar type Darlington Power Transistors
2SD2606
Silicon NPN diffusion planar type Darlington
For power amplification
Unit: mm
s Features
q Extremely satisfactory linearity of the forward current transfer ratio hFE
q High collector to base voltage VCBO q Wide area of safe operation (ASO) q TO-220(c) type package enabl  Panasonic data | | |
| 4 | D261 | NPN Transistor, 2SD261 Transistors 2SD261
 USHA data | | |
| 5 | D2611 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
D 2611 TRANSISTOR (NPN)
FEATURE power switching applications
TO-126
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector -Base Voltage
600 V
VCEO
Collector-Emi  JCET transistor | | |
| 6 | D2624 | NPN Triple Diffused Planar Silicon Transistor Ordering number : ENN6500A
2SD2624
NPN Triple Diffused Planar Silicon Transistor
2SD2624
Color TV Horizontal Deflection Output Applications
Features
High speed. High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. •  Sanyo Semicon Device transistor | | |
| 7 | D2627 | NPN Triple Diffused Planar Silicon Transistor
Ordering number : ENN6478
2SD2627
NPN Triple Diffused Planar Silicon Transistor
2SD2627
Color TV Horizontal Deflection Output Applications
Features
• • • • •
Package Dimensions
unit : mm 2079C
[2SD2627]
10.0
3.5 7.2
High speed. High breakdown voltage(VCBO=1500V). H Sanyo Semicon Device transistor | |
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