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What is E5108ASE?

This electronic component, produced by the manufacturer "Elpida Memory", performs the same function as " EDE5108ASE".


E5108ASE Datasheet PDF - Elpida Memory

Part Number E5108ASE
Description EDE5108ASE
Manufacturers Elpida Memory 
Logo Elpida Memory Logo 


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PRELIMINARY DATA SHEET
512M bits DDR2 SDRAM
EDE5104AGSE (128M words × 4 bits)
EDE5108AGSE (64M words × 8 bits)
Description
The EDE5104AGSE is a 512M bits DDR2 SDRAM
organized as 33,554,432 words × 4 bits × 4 banks.
The EDE5108AGSE is a 512M bits DDR2 SDRAM
www.DataSheet4Uo.crogmanized as 16,777,216 words × 8 bits × 4 banks.
They are packaged in 60-ball FBGA (µBGA) package.
Features
Power supply: VDD, VDDQ = 1.8V ± 0.1V
Double-data-rate architecture: two data transfers per
clock cycle
Bi-directional, differential data strobe (DQS and
/DQS) is transmitted/received with data, to be used in
capturing data at the receiver
DQS is edge aligned with data for READs: center-
aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge: data
and data mask referenced to both edges of DQS
Four internal banks for concurrent operation
Data mask (DM) for write data
Burst lengths: 4, 8
/CAS Latency (CL): 3, 4, 5
Auto precharge operation for each burst access
Auto refresh and self refresh modes
Average refresh period
7.8µs at 0°C TC ≤ +85°C
3.9µs at +85°C < TC ≤ +95°C
SSTL_18 compatible I/O
Posted CAS by programmable additive latency for
better command and data bus efficiency
Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
Programmable RDQS, /RDQS output for making × 8
organization compatible to × 4 organization
/DQS, (/RDQS) can be disabled for single-ended
Data Strobe operation.
FBGA (µBGA) package with lead free solder
(Sn-Ag-Cu)
RoHS compliant
Document No. E0715E20 (Ver. 2.0)
Date Published July 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2005

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E5108ASE equivalent
EDE5104AGSE, EDE5108AGSE
Electrical Specifications
All voltages are referenced to VSS (GND)
Execute power-up and Initialization sequence before proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit Notes
Power supply voltage
VDD
1.0 to +2.3
V1
Power supply voltage for output
VDDQ
0.5 to +2.3
V1
Input voltage
VIN 0.5 to +2.3
V1
Output voltage
VOUT
0.5 to +2.3
V1
Storage temperature
Tstg 55 to +100
°C 1, 2
Power dissipation
www.DataSheet4U.com
Short circuit output current
PD
IOUT
1.0
50
W1
mA 1
Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Operating Temperature Condition
Parameter
Symbol
Rating
Unit Notes
Operating case temperature
TC
0 to +95
°C 1, 2
Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. Supporting 0°C to +85°C with full AC and DC specifications.
Supporting 0°C to +85°C and being able to extend to +95°C with doubling auto-refresh commands in
frequency to a 32ms period (tREFI = 3.9µs) and higher temperature Self-Refresh entry via A7 "1" on
EMRS (2).
Preliminary Data Sheet E0715E20 (Ver. 2.0)
5


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Featured Datasheets

Part NumberDescriptionMFRS
E5108ASEThe function is EDE5108ASE. Elpida MemoryElpida Memory

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