DataSheet39.com

What is E5108AGBG?

This electronic component, produced by the manufacturer "Elpida Memory", performs the same function as " EDE5108AGBG".


E5108AGBG Datasheet PDF - Elpida Memory

Part Number E5108AGBG
Description EDE5108AGBG
Manufacturers Elpida Memory 
Logo Elpida Memory Logo 


There is a preview and E5108AGBG download ( pdf file ) link at the bottom of this page.





Total 30 Pages



Preview 1 page

No Preview Available ! E5108AGBG datasheet, circuit

DATA SHEET
512M bits DDR2 SDRAM
EDE5108AGBG (64M words × 8 bits)
Specifications
Density: 512M bits
Organization
16M words × 8 bits × 4 banks
Package: 60-ball FBGA
www.DataSheet4U.comLead-free (RoHS compliant)
Power supply: VDD, VDDQ = 1.8V ± 0.1V
Data rate: 667Mbps/533Mbps (max.)
1KB page size
Row address: A0 to A13
Column address: A0 to A9
Four internal banks for concurrent operation
Interface: SSTL_18
Burst lengths (BL): 4, 8
Burst type (BT):
Sequential (4, 8)
Interleave (4, 8)
/CAS Latency (CL): 3, 4, 5
Precharge: auto precharge option for each burst
access
Driver strength: normal/weak
Refresh: auto-refresh, self-refresh
Refresh cycles: 8192 cycles/64ms
Average refresh period
7.8μs at 0°C TC ≤ +85°C
3.9μs at +85°C < TC ≤ +95°C
Operating case temperature range
TC = 0°C to +95°C
Features
Double-data-rate architecture; two data transfers per
clock cycle
The high-speed data transfer is realized by the 4 bits
prefetch pipelined architecture
Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
Data mask (DM) for write data
Posted /CAS by programmable additive latency for
better command and data bus efficiency
Off-Chip-Driver Impedance Adjustment and On-Die-
Termination for better signal quality
Programmable RDQS, /RDQS output for making × 8
organization compatible to × 4 organization
/DQS, (/RDQS) can be disabled for single-ended
Data Strobe operation
Document No. E0917E30 (Ver. 3.0)
Date Published September 2006 (K) Japan
Printed in Japan
URL: http://www.elpida.com
©Elpida Memory, Inc. 2006

line_dark_gray
E5108AGBG equivalent
EDE5108AGBG
Electrical Specifications
All voltages are referenced to VSS (GND)
Execute power-up and Initialization sequence before proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit Notes
Power supply voltage
VDD
1.0 to +2.3
V1
Power supply voltage for output
VDDQ
0.5 to +2.3
V1
Input voltage
VIN 0.5 to +2.3
V1
Output voltage
VOUT
0.5 to +2.3
V1
Storage temperature
Tstg 55 to +100
°C 1, 2
Power dissipation
www.DataSheet4U.com
Short circuit output current
PD
IOUT
1.0
50
W1
mA 1
Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Operating Temperature Condition
Parameter
Symbol
Rating
Unit Notes
Operating case temperature
TC
0 to +95
°C 1, 2
Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. Supporting 0°C to +85°C with full AC and DC specifications.
Supporting 0°C to +85°C and being able to extend to +95°C with doubling auto-refresh commands in
frequency to a 32ms period (tREFI = 3.9μs) and higher temperature Self-Refresh entry via A7 "1" on
EMRS (2).
Data Sheet E0917E30 (Ver. 3.0)
5


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for E5108AGBG electronic component.


Information Total 30 Pages
Link URL [ Copy URL to Clipboard ]
Download [ E5108AGBG.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
E5108AGBGThe function is EDE5108AGBG. Elpida MemoryElpida Memory

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

E510     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search