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30N60A4D Datasheet PDF - Fairchild Semiconductor

Part Number 30N60A4D
Description HGT1N30N60A4D
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 

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30N60A4D datasheet, circuit
Data Sheet
HGT1N30N60A4D
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1N30N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFETs
and a bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. This
IGBT is ideal for many high voltage switching applications
www.DataSheoepte4Ura.tcionmg at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
Formerly Developmental Type TA49345.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1N30N60A4D
SOT-227
30N60A4D
NOTE: When ordering, use the entire part number.
Features
• 100kHz Operation At 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 58ns at TJ = 125oC
• Low Conduction Loss
Symbol
C
G
E
Packaging
JEDEC STYLE SOT-227B
GATE
EMITTER
TAB
(ISOLATED)
COLLECTOR EMITTER
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B

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30N60A4D equivalent
HGT1N30N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
220
RG = 3, L = 200µH, VCE = 390V
200 VGE = 12V, VGE = 15V, TJ = 125oC
180
70
RG = 3, L = 200µH, VCE = 390V
60
TJ = 125oC, VGE = 12V OR 15V
50
160
140
www.DataSheet4U1.2c0o0m
VGE = 12V, VGE = 15V, TJ = 25oC
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
40
TJ = 25oC, VGE = 12V OR 15V
30
20
0
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
60
350
DUTY CYCLE < 0.5%, VCE = 10V
300 PULSE DURATION = 250µs
250
TJ = 25oC
200
TJ = 125oC
150
TJ = -55oC
100
50
0
6 7 8 9 10 11
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
12
5
RG = 3, L = 200µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
4
ICE = 60A
3
2
ICE = 30A
1
ICE = 15A
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
150
15.0
IG(REF) = 1mA, RL = 15, TJ = 25oC
12.5
10.0
VCE = 600V
VCE = 400V
7.5
VCE = 200V
5.0
2.5
0
0 50 100 150 200
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
250
20 TJ = 125oC, L = 200µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
16
12
8
ICE = 60A
4
ICE = 30A
0
3 10
ICE = 15A
100
300
RG, GATE RESISTANCE ()
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B

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