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What is C2310?

This electronic component, produced by the manufacturer "Renesas", performs the same function as "NPN Transistor - 2SC2310".


C2310 Datasheet PDF - Renesas

Part Number C2310
Description NPN Transistor - 2SC2310
Manufacturers Renesas 
Logo Renesas Logo 


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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
www.DataSheAet4cUc.coormdingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003

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C2310 equivalent
2SC458 (LG), 2SC2310
Electrical Characteristics (Ta = 25°C)
2SC458 (LG)
2SC2310
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
30
55
—V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
30
50
—V
IC = 1 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
5
—— 5
— —V
IE = 10 µA, IC = 0
Collector cutoff current ICBO
Emitter cutoff current IEBO
DC current transfer ratio hFE*1
www.DaCtaoSllheecetot4rUt.ocoemmitter
saturation voltage
VCE(sat)
——
——
100 —
——
0.5 — —
0.5 — —
500 100 —
0.2 — —
0.5 µA
0.5 µA
320
0.2 V
VCB =18 V, IE = 0
VEB = 2 V, IC = 0
VCE = 12 V, IC = 2 mA
IC = 10 mA, IB = 1 mA
Base to emitter voltage VBE
Gain bandwidth product fT
Collector output
capacitance
Cob
— 0.67 0.75 — 0.67 0.75 V
VCE = 12 V, IC = 2 mA
— 230 — — 230 — MHz VCE = 12 V, IC = 2 mA
— 1.8 3.5 — 1.8 3.5 pF VCB = 10 V, IE = 0,
f = 1 MHz
Noise figure
NF — 3 5 — 3 5 dB VCE = 6 V, IC = 0.1 mA,
f = 120 Hz, Rg = 500
Small signal input
impedance
hie
— 16.5 — — 16.5 — kVCE = 5V, IC = 0.1mA,
f = 270 Hz
Small signal voltage
feedback ratio
hre
— 70 — — 70 — × 10–6
Small signal current
transfer ratio
hfe
— 130 — — 130 —
Small signal output
admittance
hoe
— 11.0 — — 11.0 — µS
Note: 1. The 2SC458 (LG) and 2SC2310 are grouped by hFE as follows.
B CD
2SC458 (LG) 100 to 200 160 to 320 250 to 500
2SC2310 100 to 200 160 to 320 —


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C2310 datasheet


1. PDF - TCXO Oscillator 9Vectron)

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