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PDF OP770D Data sheet ( Hoja de datos )
| Número de pieza | OP770D | |
| Descripción | NPN Photo transistor | |
| Fabricantes | OPTEK Technologies | |
| Logotipo |  |
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Prod uct Bul le tin OP770A
Feb ru ary 2000
NPN Phototransistor with Collector-Emitter Capacitor
Types OP770A, OP770B, OP770C, OP770D
Features
• Supresses high frequency noise
• Variety of sensitivity ranges
• Wide receiving angle
• Side looking package for space limited
applications
Description
The OP770 consists of an NPN
phototransistor and 1000 pF capacitor
molded in a clear epoxy package. The
internal collector-emitter capacitor allows
the device to be used in applications
where external high frequency emissions
could compromise signal integrity.
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Collector-EmitterVoltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter-CollectorVoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40° C to +100° C
Lead Soldering Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec . with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260° C(1)
PowerDissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2)
Notes:
(1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec . max. when flow sol der ing.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/° C above 25° C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lense surface of the
phototransistor being tested.
(4) To calculate typical collector dark current in µA, use the formula ICED = 10 (0.040TA-3.4) when
TA is ambient temperature in °C.
Typi cal Per form ance Curves
The device’s wide receiving angle
provides relatively even reception over a
large area.
Typical Spectral Response
Schematic
The OP770 is 100% production tested
using an infrared light source for close
correlation with Optek’s GaAs and
GaAIAs emitters.
Side-looking package is designed for
easy PC board mounting of slotted
optical switches or optical interrupt
detectors.
Wavelength - nm
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet OP770D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| OP770A | NPN Photo transistor | OPTEK Technologies |
| OP770B | NPN Photo transistor | OPTEK Technologies |
| OP770C | NPN Photo transistor | OPTEK Technologies |
| OP770D | NPN Photo transistor | OPTEK Technologies |
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