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Número de pieza | AP4563GH | |
Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
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Advanced Power
Electronics Corp.
AP4563GH
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant
DeS1scription
D1/D2
S1
G1 S2
G2
TO-252-4L
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
N-CH
P-CH
G1
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G2
S1
40V
30mΩ
30A
-40V
36mΩ
-27A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c (N-CH)
Rthj-c (P-CH)
Rthj-a
Parameter
Thermal Resistance Junction-case3
Thermal Resistance Junction-case3
Thermal Resistance Junction-ambient3
Rating
N-channel
P-channel
40 -40
±20 ±20
30 -27
19 -17
100 -100
39 -41.7
0.31 -0.34
-55 to 150
-55 to 150
Max.
Max.
Max.
Value
3.2
3
110
Units
V
V
A
A
A
W
W/℃
℃
℃
Units
℃/W
℃/W
℃/W
Data and specifications subject to change without notice
200617051-1/7
1 page www.DataSheet4U.com
N-Channel
12
I D = 20 A
9 V DS = 30 V
6
3
0
0 5 10 15 20
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1ms
T C =25 o C
Single Pulse
10ms
100ms
1s
DC
1
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
50
V DS =5V
40
30 T j =25 o C
T j =150 o C
20
10
0
0246
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
AP4563GH
f=1.0MHz
10000
C1000 iss
C oss
C100 rss
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Pulse Width (s)
1
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 12. Gate Charge Waveform
5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet AP4563GH.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP4563GH | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP4563GH-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP4563GM | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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