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PDF BT236-D Data sheet ( Hoja de datos )
| Número de pieza | BT236-D | |
| Descripción | Sensitive Gate Triacs | |
| Fabricantes | SemiWell Semiconductor | |
| Logotipo |  |
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SemiWell Semiconductor
Sensitive Gate Triacs
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 6 A )
◆ High Commutation dv/dt
◆ Sensitive Gate Triggering 4 Mode
◆ Non-isolated Type
General Description
This device is sensitive gate triac suitable for direct coupling
to TTL, HTL, CMOS and application such as various logic
functions, AC switching applications, phase control applica-
tion such as fan speed, light controllers and home appliance
equipment.
Preliminary
BT236-D
Symbol
○ 2.T2
▼▲
○ 3.Gate
1.T1 ○
TO-220
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
Sine wave, 50 to 60 Hz, Gate open
TC =101 °C, Full Sine wave
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
tp = 10ms
PGM
PG(AV)
IGM
VGM
TJ
TSTG
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TC = 101 °C, Pulse width ≤ 1.0us
Over any 20ms period
tp = 20us, TJ=125°C
tp = 20us, TJ=125°C
Ratings
600
6.0
60/66
18
3.0
0.3
2.0
10
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A2s
W
W
A
V
°C
°C
Mar, 2004. Rev. 0
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/5
1 page  
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BT236-D
TO-220 Package Dimension
Dim.
mm
Inch
Min. Typ. Max. Min. Typ. Max.
A 9.7
10.1 0.382
0.398
B 6.3
6.7 0.248
0.264
C 9.0
9.47 0.354
0.373
D 12.8
13.3 0.504
0.524
E 1.2
1.4 0.047
0.055
F 1.7
0.067
G 2.5
0.098
H 3.0
3.4 0.118
0.134
I 1.25
1.4 0.049
0.055
J 2.4
2.7 0.094
0.106
K 5.0
5.15 0.197
0.203
L 2.2
2.6 0.087
0.102
M 1.25
1.55 0.049
0.061
N 0.45
0.6 0.018
0.024
O 0.6
1.0 0.024
0.039
φ 3.6
0.142
E
B
F
C
A
HI
G
D
L
1
2
3
J
K
N
φ
M
1. T1
2. T2
3. Gate
O
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