(PDF) BD034 Datasheet

Número de pieza	BD034
Descripción	TRANSISTOR
Fabricantes	Jiangsu Changjiang Electronics
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No Preview Available ! www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD034 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: -2.5 A Collector-base voltage V(BR)CBO: -110 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TO-126 1. EMITTER 2. COLLECTOR 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Test conditions Ic=-100µA, IE=0 Ic=-10mA, IB=0 IE=-100µA, IC=0 VCB=-100V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-100mA VCE=-2V, IC=-1.5A IC=-2A, IB=-200mA VCE=-5V, IC=-500mA VCE=-1V, IC=-250mA, f=1MHz MIN TYP MAX UNIT -110 V -80 V -7 V -1 µA -1 µA 100 560 40 -0.5 V -1 V 3 MHz CLASSIFICATION OF hFE(1) Rank R Range 100-200 S 140-280 T 200-400 U 280-560 1 page

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