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PDF AWT6252 Data sheet ( Hoja de datos )
| Número de pieza | AWT6252 | |
| Descripción | Linear Power Amplifier Module | |
| Fabricantes | ANADIGICS | |
| Logotipo |  |
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FEATURES
• InGaP HBT Technology
• High Efficiency: 39%
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• VREF = +2.85 V (+2.75 V min over temp)
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package:
1.56mm Max
APPLICATIONS
• Dual Mode 3GPP Wireless Handsets
AWT6252
IMT/WCDMA 3.4V/27.5dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.3
AWT6252
M7 Package
10 Pin 4 x 4 x 1.5 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6252 meets the increasing demands for
higher output power in 3GPP 1XRTT handsets. The PA
module is optimized for VREF = +2.85 V, a requirement
for compatibility with the Qualcomm® 6250 chipset.
The device is manufactured on an advanced InGaP
HBT MMIC technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
Selectable bias modes that optimize efficiency for
different output power levels, and a shutdown mode
with low leakage current, increase handset talk and
standby time. The self-contained 4 x 4 x 1.5 mm surface
mount package incorporates matching networks
optimized for output power, efficiency, and linearity in a
50 Ω system.
GND at slug (pad)
VCC 1
10 VCC
RFIN 2
9 GND
GND 3
8 RFOUT
VMODE 4
Bias Control
7 GND
VREF 5
6 GND
Figure 1: Block Diagram
03/2004
1 page  
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APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to both the VREF and VMODE voltages.
AWT6252
Bias Modes
The power amplifier may be placed in either a Low
Bias mode or a High Bias mode by applying the
appropriate logic level (see Operating Ranges table)
to the VMODE voltage. The Bias Control table lists the
recommended modes of operation for various
applications.
APPLICATION
CDMA - low power
CDMA - high power
Shutdown
Table 5: Bias Control
POUT
LEVELS
BIAS
MODE
VREF
VMODE
VCC
<+16dBm
Low +2.85 V +2.85 V > +1.5
>+16 dBm
High +2.85 V 0 V
+3.4
-
Shutdown 0 V
0V
-
VCC1
RF IN
VMODE
VREF
C1
0.01µF
1 VCC
2 RFIN
3 GND
4 VMODE
5 VREF
C2
0.01µF
VCC
GND
RFOUT
GND
10
9
8
7
GND 6
GND
at slug
C3
0.01µF
VCC2
C4
2.2µF ceramic
RF OUT
Figure 3: Application Circuit Schematic
PRELIMINARY DATA SHEET - Rev 1.3
03/2004
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AWT6252.PDF ] | |
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