|
|
Datasheet CS1N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CS1N60 | VDMOS
»ª¾§·ÖÁ¢Æ÷¼þ
CS1N60(F)
CS1N60(F)ÐÍ
1.¸ÅÊöÓëÌصã
CS1N60(F)ÊÇ ¹Øµç· ¾ßÓÐÈçÏÂÌص㠿ª¹ØËÙ¶Èì ̬ͨµç×èС ¿É²¢ÁªÊ¹Óà Çý¶¯¼òµ¥ ·â×°ÐÎʽ ²úÆ·Ãû³ CS1N60 CS1N60F ·â×°ÐÎʽ TO-220 TO-2 |  EDN | data |
| 2 | CS1N60A1H | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS1N60 A1H
○R
General Description：
CS1N60 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
600 0.8 3 11
performance and enhance |  Huajing Microelectronics | mosfet |
| 3 | CS1N60A3H | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS1N60 A3H
○R
General Description：
VDSS
600 V
CS1N60 A3H, the silicon N-channel Enhanced ID
0.8 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
11 Ω
perfor | Huajing Microelectronics | mosfet |
| 4 | CS1N60B1R | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS1N60 B1R
○R
General Description：
CS1N60 B1R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
600 1.5 3 7
performance and enhance | Huajing Microelectronics | mosfet |
| 5 | CS1N60B3R | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS1N60 B3R
○R
General Description：
CS1N60 B3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
600 1.5 32 7
performance and enhance | Huajing Microelectronics | mosfet |
CS1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CS10-12.000MABJTR | Surface Mount Crystals
CS10 Series Ceramic Surface Mount Crystals
Specifications: • Frequency/Temperature: ±50ppm, -10°C ~ 60°C • Operating Temperature: -40°C ~ 85°C • Drive Level: 50µW Max. • Frequency Tolerance: ±30ppm • Load Capacitance: 18.0pF • Equivalent Series Resistance (ES  Citizen data | | |
| 2 | CS10-12.288MABJTR | Surface Mount Crystals
CS10 Series Ceramic Surface Mount Crystals
Specifications: • Frequency/Temperature: ±50ppm, -10°C ~ 60°C • Operating Temperature: -40°C ~ 85°C • Drive Level: 50µW Max. • Frequency Tolerance: ±30ppm • Load Capacitance: 18.0pF • Equivalent Series Resistance (ES Citizen data | | |
| 3 | CS10-12.500MABJTR | Surface Mount Crystals
CS10 Series Ceramic Surface Mount Crystals
Specifications: • Frequency/Temperature: ±50ppm, -10°C ~ 60°C • Operating Temperature: -40°C ~ 85°C • Drive Level: 50µW Max. • Frequency Tolerance: ±30ppm • Load Capacitance: 18.0pF • Equivalent Series Resistance (ES Citizen data | | |
| 4 | CS10-12.xxxxxxJTR | CM309S Series Plastic Surface Mount Crystals
CS10 Series Ceramic Surface Mount Crystals
Specifications: • Frequency/Temperature: ±50ppm, -10°C ~ 60°C • Operating Temperature: -40°C ~ 85°C • Drive Level: 50µW Max. • Frequency Tolerance: ±30ppm • Load Capacitance: 18.0pF • Equivalent Series Resistance (ES Citizen data | | |
| 5 | CS10-13.560MABJTR | Surface Mount Crystals
CS10 Series Ceramic Surface Mount Crystals
Specifications: • Frequency/Temperature: ±50ppm, -10°C ~ 60°C • Operating Temperature: -40°C ~ 85°C • Drive Level: 50µW Max. • Frequency Tolerance: ±30ppm • Load Capacitance: 18.0pF • Equivalent Series Resistance (ES Citizen data | | |
| 6 | CS10-13.xxxxxxJTR | CM309S Series Plastic Surface Mount Crystals
CS10 Series Ceramic Surface Mount Crystals
Specifications: • Frequency/Temperature: ±50ppm, -10°C ~ 60°C • Operating Temperature: -40°C ~ 85°C • Drive Level: 50µW Max. • Frequency Tolerance: ±30ppm • Load Capacitance: 18.0pF • Equivalent Series Resistance (ES Citizen data | | |
| 7 | CS10-14.31818MABJTR | Surface Mount Crystals
CS10 Series Ceramic Surface Mount Crystals
Specifications: • Frequency/Temperature: ±50ppm, -10°C ~ 60°C • Operating Temperature: -40°C ~ 85°C • Drive Level: 50µW Max. • Frequency Tolerance: ±30ppm • Load Capacitance: 18.0pF • Equivalent Series Resistance (ES Citizen data | |
| Esta página es del resultado de búsqueda del CS1N60. Si pulsa el resultado de búsqueda de CS1N60 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |