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Número de pieza | 5STP24H2800 | |
Descripción | Phase Control Thyristor | |
Fabricantes | ABB | |
Logotipo | ||
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VDSM = 2800 V
ITAVM = 2625 A
ITRMS = 4120 A
ITSM = 43000 A
VT0 = 0.85 V
rT = 0.160 mΩ
Phase Control Thyristor
5STP 24H2800
Doc. No. 5SYA1047-02 Sep. 01
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Part Number
VDRM
VRRM
VRSM1
IDRM
IRRM
dV/dtcrit
5STP 24H2800 5STP 24H2600 5STP 24H2200 Conditions
2800 V
2600 V
2200 V f = 50 Hz, tp = 10ms
3000 V
2800 V
2400 V tp = 5ms, single pulse
≤ 300 mA
≤ 300 mA
VDRM
VRRM
Tj = 125°C
1000 V/µs
Exp. to 0.67 x VDRM, Tj = 125°C
Mechanical data
FM Mounting force
nom.
min.
max.
a Acceleration
Device unclamped
Device clamped
m Weight
DS Surface creepage distance
Da Air strike distance
50 kN
45 kN
60 kN
50 m/s2
100 m/s2
0.9 kg
36 mm
15 mm
ABB Semiconductors AG reserves the right to change specifications without notice.
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5STP 24H2800
Fig. 8 Gate trigger characteristics.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-
state current.
Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email
Internet www.abbsem.com
Doc. No. 5SYA1047-02 Sep. 01
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet 5STP24H2800.PDF ] |
Número de pieza | Descripción | Fabricantes |
5STP24H2800 | Phase Control Thyristor | ABB |
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