AO3406 Datasheet PDF - Alpha & Omega Semiconductors
Part Number | AO3406 | |
Description | N-Channel Enhancement Mode Field Effect Transistor | |
Manufacturers | Alpha & Omega Semiconductors | |
Logo | ||
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AO3406
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3406 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3406 is Pb-free
(meets ROHS & Sony 259 specifications). AO3406L
is a Green Product ordering option. AO3406 and
AO3406L are electrically identical.
Features
VDS (V) = 30V
ID = 3.6A (VGS = 10V)
RDS(ON) < 65mΩ (VGS = 10V)
RDS(ON) < 105mΩ (VGS = 4.5V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
3.6
2.9
15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for AO3406 electronic component. |
Information | Total 4 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ AO3406.PDF Datasheet ] |
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