28F128P33 Datasheet PDF - Intel
Part Number | 28F128P33 | |
Description | StrataFlash Embedded Memory | |
Manufacturers | Intel | |
Logo | ||
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Intel StrataFlash® Embedded Memory (P33)
Product Features
Datasheet
High performance:
— 85 ns initial access
— 52MHz with zero wait states, 17ns clock-to-
data output synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst mode
— Buffered Enhanced Factory Programming
(BEFP) at 5 µs/byte (Typ)
— 3.0 V buffered programming at 7 µs/byte
(Typ)
Architecture:
— Multi-Level Cell Technology: Highest Density
at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or
bottom configuration
— 128-KByte main blocks
Voltage and Power:
— VCC (core) voltage: 2.3 V – 3.6 V
— VCCQ (I/O) voltage: 2.3 V – 3.6 V
— Standby current: 70 µA (Typ) for 256-Mbit
— 4-Word synchronous read current:
16 mA (Typ) at 52MHz
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology (130 nm)
Security:
— One-Time Programmable Registers:
— 64 unique factory device identifier bits
— 64 user-programmable OTP bits
— Additional 2048 user-programmable OTP
bits
— Selectable OTP space in Main Array:
— Four pre-defined 128-KByte blocks (top or
bottom configuration.
— Entire Array OTP (Top or Bottom Config.)
— Absolute write protection: VPP = VSS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Software:
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
— Intel® Flash Data Integrator optimized
— Basic Command Set and Extended Command
Set compatible
— Common Flash Interface capable
Density and Packaging
— 56-Lead TSOP package (64, 128, 256, 512-
Mbit)
— 64-Ball Intel® Easy BGA package (64, 128,
256, 512-Mbit)
— Intel® QUAD+ SCSP (64, 128, 256, 512-Mbit)
— 16-bit wide data bus
P33 is the latest generation of Intel StrataFlash® memory devices. Offered in 64-Mbit up through
512-Mbit densities, the P33 flash memory device brings reliable, two-bit-per-cell storage technology
to the embedded flash market segment. Benefits include more density in less space, high-speed
interface, lowest cost-per-bit NOR device, and support for code and data storage. Features include
high-performance synchronous-burst read mode, fast asynchronous access times, low power, flexible
security options, and three industry standard package choices.
P33 product family is manufactured using Intel® 130 nm ETOX™ VIII process technology.
Order Number: 314749-002US
August 2006
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Intel StrataFlash® Embedded Memory P33
C.5 Intel-Specific Extended Query Table..................................................................... 95
D Additional Information .......................................................................................... 101
E Ordering Information for Discrete Products........................................................... 102
F Ordering Information for SCSP Products................................................................ 103
August 2006
Order Number: 314749-002US
Intel StrataFlash® Embedded Memory P33 Flash Memory
Datasheet
5
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Information | Total 30 Pages | |
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