DFP50N06 Datasheet PDF - DnI
| Part Number | DFP50N06 | |
| Description | N-Channel MOSFET | |
| Manufacturers | DnI | |
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DFP50N06
N-Channel MOSFET
Features
RDS(on) (Max 0.022 )@VGS=10V
Gate Charge (Typical 36nC)
Improved dv/dt Capability
High ruggedness
100% Avalanche Tested
1.Gate
2.Drain
3.Source
General Description
This N-channel enhancement mode field-effect power transistor
using DI semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for battery operated systems like a DC-DC converter
motor control , ups ,audio amplifier.
Also, especially designed to minimize rds(on) , low gate charge
and high rugged avalanche characteristics.
BVDSS = 60V
RDS(ON) = 0.022 ohm
ID = 50A
TO-220
123
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
60
50
38
200
±25
642
12
7.0
120
0.8
- 55 ~ 175
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
Value
Typ.
-
0.5
-
Max.
1.25
-
62.5
May, 2005. Rev.1.
Copyright@ D&I Semiconductor Co., Ltd., Korea . All rights reserved
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1/7
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DFP50N06
Fig. 12. Gate Charge Test Circuit & Waveforms
12V 200nF 50KO
Same Type
as DUT
VGS
300nF
VGS
VDS
Qgs
DUT
1mA
Qg
Qgd
Charge
Fig 13. Switching Time Test Circuit & Waveforms
VDS
10V
Pulse
RG
Generator
RL
VDD
(0.5 rated VDS)
DUT
VDS 90%
Vin 10%
td(on)
tr
ton
td(off)
tf
toff
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
10V
VDS
ID
RG
L
DUT
VDD
1 BVDSS
EAS = LL IAS2
2 BVDSS - VDD
BVDSS
IAS
ID(t)
tp
VDS(t)
Time
5/7
Copyright@ D&I Semiconductor Co., Ltd., Korea . All rights reserved
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for DFP50N06 electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ DFP50N06.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | Manufacturers |
| DFP50N06 | The function is N-Channel MOSFET. | DnI |
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