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What is DE28F800F3?

This electronic component, produced by the manufacturer "Intel", performs the same function as "3V Fast Book Block Flash Memory".


DE28F800F3 Datasheet PDF - Intel

Part Number DE28F800F3
Description 3V Fast Book Block Flash Memory
Manufacturers Intel 
Logo Intel Logo 


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3 Volt Fast Boot Block Flash Memory
28F800F3—Automotive
Preliminary Datasheet
Product Features
s High Performance
Up to 50 MHz Effective Zero Wait-State
Performance
Synchronous Burst-Mode Reads
Asynchronous Page-Mode Reads
s SmartVoltage Technology
3.0 V3.6 V Read and Write Operations for
Low Power Designs
12 V VPP Fast Factory Programming
s Enhanced Data Protection
Absolute Write Protection with
VPP = GND
Block Locking
Block Erase/Program Lockout during Power
Transitions
s Manufactured on ETOXV Flash Technology
s Supports Code Plus Data Storage
Optimized for Flash Data Integrator (FDI)
and other Intel® Software
Fast Program Suspend Capability
Fast Erase Suspend Capability
s Flexible Blocking Architecture
Eight 4-Kword Blocks for Data
32-Kword Main Blocks for Code
Top or Bottom Boot Configurations
s Extended Cycling Capability
s Low Power Consumption
s Automated Program and Block Erase
Algorithms
Command User Interface for Automation
Status Register for System Feedback
s Industry-Standard Packaging
56-Lead SSOP
Intel® Easy BGA
The Intel® 3 Volt Fast Boot Block Flash memory offers the highest performance synchronous burst reads
making it an ideal memory solution for burst CPUs. The Intel 3 Volt Fast Boot Block Flash memory also
supports asynchronous page mode operation for non-clocked memory subsystems. Combining high read
performance with the intrinsic nonvolatility of flash memory eliminates the traditional redundant memory
paradigm of shadowing code from a slower nonvolatile storage source to a faster execution memory device,
(e.g., SRAM SDRAM), for improved system performance. By adding 3 Volt Fast Boot Block Flash
memory to your system you could reduce the total memory requirement, which helps increase reliability
and reduce overall system power consumptionall while reducing system cost.
This family of products is manufactured on Intel® 0.4 µm ETOXV process technology. They are
available in a wide variety of industry-standard packaging technologies.
Notice: This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
Order Number: 290686-003
March 2001

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DE28F800F3 equivalent
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228F800F3Automotive
Revision History
Date of
Revision
10/01/99
08/03/00
03/26/01
Version
-001
-002
-003
Description
Original version
Removed all references to 5 V and 1.65 V I/O capability.
Removed -125 ns device and added 80ns device.
Changed tCHQV time from 19 ns to 17 ns.
Changed tAPA time from 35 ns to 25 ns.
Changed tEHQZ/GHQV time from 25 ns to 23 ns.
Changed tDVWH time from 70 ns to 63 ns.
Changed block program and erase times in Table 8.8.
Minor text edits.
Changed tCHQV time
teristics—Read-Only
for 95 device from 10ns to 19ns in Table 8.5,
Operations (1,2) —Automotive Temperature
AC
Charac-
Revised Table 8.8, Automotive Temperature Block Erase and Program
Performance (1,2,3)
PRELIMINARY
v


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Information Total 30 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
DE28F800F3The function is 3V Fast Book Block Flash Memory. IntelIntel
DE28F800F3T95The function is 3V Fast Book Block Flash Memory. IntelIntel

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