DE28F800F3 Datasheet PDF - Intel
Part Number | DE28F800F3 | |
Description | 3V Fast Book Block Flash Memory | |
Manufacturers | Intel | |
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3 Volt Fast Boot Block Flash Memory
28F800F3—Automotive
Preliminary Datasheet
Product Features
s High Performance
— Up to 50 MHz Effective Zero Wait-State
Performance
— Synchronous Burst-Mode Reads
— Asynchronous Page-Mode Reads
s SmartVoltage Technology
— 3.0 V−3.6 V Read and Write Operations for
Low Power Designs
— 12 V VPP Fast Factory Programming
s Enhanced Data Protection
— Absolute Write Protection with
VPP = GND
— Block Locking
— Block Erase/Program Lockout during Power
Transitions
s Manufactured on ETOX™ V Flash Technology
s Supports Code Plus Data Storage
— Optimized for Flash Data Integrator (FDI)
and other Intel® Software
— Fast Program Suspend Capability
— Fast Erase Suspend Capability
s Flexible Blocking Architecture
— Eight 4-Kword Blocks for Data
— 32-Kword Main Blocks for Code
— Top or Bottom Boot Configurations
s Extended Cycling Capability
s Low Power Consumption
s Automated Program and Block Erase
Algorithms
— Command User Interface for Automation
— Status Register for System Feedback
s Industry-Standard Packaging
— 56-Lead SSOP
— Intel® Easy BGA
The Intel® 3 Volt Fast Boot Block Flash memory offers the highest performance synchronous burst reads—
making it an ideal memory solution for burst CPUs. The Intel 3 Volt Fast Boot Block Flash memory also
supports asynchronous page mode operation for non-clocked memory subsystems. Combining high read
performance with the intrinsic nonvolatility of flash memory eliminates the traditional redundant memory
paradigm of shadowing code from a slower nonvolatile storage source to a faster execution memory device,
(e.g., SRAM SDRAM), for improved system performance. By adding 3 Volt Fast Boot Block Flash
memory to your system you could reduce the total memory requirement, which helps increase reliability
and reduce overall system power consumption—all while reducing system cost.
This family of products is manufactured on Intel® 0.4 µm ETOX™ V process technology. They are
available in a wide variety of industry-standard packaging technologies.
Notice: This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
Order Number: 290686-003
March 2001
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228F800F3—Automotive
Revision History
Date of
Revision
10/01/99
08/03/00
03/26/01
Version
-001
-002
-003
Description
Original version
Removed all references to 5 V and 1.65 V I/O capability.
Removed -125 ns device and added 80ns device.
Changed tCHQV time from 19 ns to 17 ns.
Changed tAPA time from 35 ns to 25 ns.
Changed tEHQZ/GHQV time from 25 ns to 23 ns.
Changed tDVWH time from 70 ns to 63 ns.
Changed block program and erase times in Table 8.8.
Minor text edits.
Changed tCHQV time
teristics—Read-Only
for –95 device from 10ns to 19ns in Table 8.5,
Operations (1,2) —Automotive Temperature
AC
Charac-
Revised Table 8.8, Automotive Temperature Block Erase and Program
Performance (1,2,3)
PRELIMINARY
v
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Information | Total 30 Pages | |
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