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PDF K2865 Data sheet ( Hoja de datos )
| Número de pieza | K2865 | |
| Descripción | MOSFET ( Transistor ) - 2SK2865 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K2865 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK2865
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV)
2SK2865
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
• Low drain−source ON-resistance
: RDS (ON) = 4.2 Ω (typ.)
• High forward transfer admittance
: |Yfs| = 1.7 S (typ.)
• Low leakage current
: IDSS = 100 μA (max) (VDS = 600 V)
• Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
6.5 ± 0.2
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.8 MAX.
0.6 ± 0.15
1
1.05 MAX.
23
1.1 ± 0.2
0.6 MAX.
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
DC (Note 1)
Drain current
Pulse (t = 1 ms)
(Note 1)
Pulse (t = 100 μs)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
600
±30
2
5
8
20
93
2
2
150
−55 to 150
V
V
V
A
A
A
W
mJ
A
mJ
°C
°C
2.3 ± 0.15 2.3 ± 0.15
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
2
1
3
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c)
Rth (ch−a)
6.25 °C / W
125 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 Ω, IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Start of commercial production
2007-12
1 2013-11-01
1 page  
2SK2865
RG = 25 Ω
VDD = 90 V, L = 41 mH
EAS
=
1
2
⋅ L ⋅ I2
⋅ ⎜⎛
⎝
BVDSS
BVDSS − VDD
⎟⎞
⎠
5 2013-11-01
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K2865.PDF ] | |
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