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PDF APTGT100DH170G Data sheet ( Hoja de datos )
| Número de pieza | APTGT100DH170G | |
| Descripción | IGBT Power Module | |
| Fabricantes | Advanced Power Technology | |
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APTGT100DH170G
Asymmetrical - Bridge
Trench + Field Stop IGBT®
Power Module
VCES = 1700V
IC = 100A @ Tc = 80°C
Q1
G1
VBUS
CR3
E1 OUT1 OUT2
CR2
Q4
0/VBUS
G4
E4
G1 VBUS
E1
OUT 1
0/VBUS
OUT2
E4
G4
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
150
100
200
±20
560
200A @ 1600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGT100DH170G
Operating Frequency vs Collector Current
25
V CE =900V
20 D=50%
ZVS
RG=4.7 Ω
15
TJ=125°C
TC=75°C
10 ZCS
5 hard
s witching
0
0 20 40
60 80 100 120 140
IC (A)
Forward Characteristic of diode
200
175
150 TJ=25°C
125
100
75
50 TJ=125°C
TJ= 125°C
25
0
0 0.5 1 1.5 2 2.5
VF (V)
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.35 0.9
Diode
0.3 0.7
0.25
0.2 0.5
0.15 0.3
0.1
0.05 0.1
0 0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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