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Datasheet 7N60B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 7N60B | N-CHANNEL MOSFET 7N60(F,B,H)
7A mps,600 Volts N-CHANNEL MOSFET
FEATURE
7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 7N60
ITO-220AB 7N60F
TO-263 7N60B
TO-262 7N60H
Absolute Maximum Ratings(TC=25℃,u | CHONGQING PINGYANG | mosfet |
2 | 7N60B | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
7N60B
·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive | Inchange Semiconductor | mosfet |
3 | 7N60B | Hiperfast (tm) Igbt
HiPerFASTTM IGBT
IXGA 7N60B IXGP 7N60B
VCES IC25 VCE(sat) tfi
= 600 V = 14 A = 2 V = 150 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90° | IXYS Corporation | igbt |
7N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 7N60 | N-CHANNEL MOSFET 7N60(F,B,H)
7A mps,600 Volts N-CHANNEL MOSFET
FEATURE
7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 7N60
ITO-220AB 7N60F
TO-263 7N60B
TO-262 7N60H
Absolute Maximum Ratings(TC=25℃,u CHONGQING PINGYANG mosfet | | |
2 | 7N60 | N-Channel Power MOSFET, Transistor SEMICONDUCTOR
7N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (7A, 600Volts)
DESCRIPTION
The Nell 7N60 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. thres nELL mosfet | | |
3 | 7N60 | N-Channel Power MOSFET, Transistor Shenzhen yecheng technology industry co.,ltd
7N60
N-Channel Power MOSFET
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed yecheng technology mosfet | | |
4 | 7N60 | N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD
7N60
7.4A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Th Unisonic Technologies mosfet | | |
5 | 7N60 | N-CHANNEL MOSFET KIA
SEMICONDUCTORS
600V N-CHANNEL MOSFET
7N60
1.Description
The KIA7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually use KIA mosfet | | |
6 | 7N60-F | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
7N60-F
7.4A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 7N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics Unisonic Technologies mosfet | | |
7 | 7N60-M | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
7N60-M
7.4A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 7N60-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics Unisonic Technologies mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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