|
|
PDF SPB07N60C2 Data sheet ( Hoja de datos )
| Número de pieza | SPB07N60C2 | |
| Descripción | Cool MOS Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SPB07N60C2 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
Final data
SPP07N60C2, SPB07N60C2
SPA07N60C2
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
Product Summary
VDS @ Tjmax 650
RDS(on)
0.6
ID 7.3
V
Ω
A
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
Type
SPP07N60C2
SPB07N60C2
SPA07N60C2
P-TO220-3-31
3
12
Package
Ordering Code
P-TO220-3-1 Q67040-S4309
P-TO263-3-2 Q67040-S4310
P-TO220-3-31 Q67040-S4331
Marking
07N60C2
07N60C2
07N60C2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7.3A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Reverse diode dv/dt
IS = 7.3 A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Page 1
Symbol
Value
SPP_B SPA
ID
7.3 7.31)
4.6 4.61)
ID puls
EAS
14.6
230
14.6
230
Unit
A
A
mJ
EAR 0.5 0.5
IAR 7.3 7.3 A
dv/dt
6
6 V/ns
VGS
VGS
Ptot
Tj , Tstg
±20 ±20 V
±30 ±30
83 32 W
-55...+150
°C
2002-08-12
1 page  
www.DataSheet4U.com
1 Power dissipation
Ptot = f (TC)
Final data
SPP07N60C2, SPB07N60C2
SPA07N60C2
2 Power dissiaption FullPAK
Ptot = f (TC)
100 SPP07N60C2
W
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2
A
35
W
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 150
TC
4 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, TC = 25°C
10 2
A
10 1
10 1
10 0
10 -1
10
-2
10
0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10 0
10 -1
10 1
10 2 V 10 3
10
-2
10
0
VDS
Page 5
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10 1
10 2 V 10 3
VDS
2002-08-12
5 Page 
www.DataSheet4U.com
Final data
SPP07N60C2, SPB07N60C2
SPA07N60C2
Definition of diodes switching characteristics
Page 11
2002-08-12
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet SPB07N60C2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SPB07N60C2 | Cool MOS Power Transistor | Infineon Technologies |
| SPB07N60C2 | Cool MOS Power Transistor | Infineon Technologies |
| SPB07N60C3 | Cool MOS Power Transistor | Infineon Technologies |
| SPB07N60C3 | Cool MOS Power Transistor | Infineon Technologies |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |