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PDF 2SK3814 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3814 | |
| Descripción | SWITCHING N-CHANNEL POWER MOSFET | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3814
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3814 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)
• Low Ciss: Ciss = 5450 pF TYP.
ORDERING INFORMATION
PART NUMBER
2SK3814
2SK3814-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±60
±240
Total Power Dissipation (TC = 25°C)
PT1
84
Total Power Dissipation (TA = 25°C)
PT2
1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
Tstg −55 to +150
EAS 102
IAR 32
EAR 102
V
V
A
A
W
W
°C
°C
mJ
A
mJ
(TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
3. Tch(peak) ≤ 150°C, RG = 25 Ω
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16740EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
15
10
5
0
-75
VGS = 4.5 V
10 V
ID = 30 A
Pulsed
-25 25 75 125
Tch - Channel Temperature - °C
175
1000
SWITCHING CHARACTERISTICS
100
10
td(off)
td(on)
tf
tr
1
0.1
1000
1 10
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
100
10 VGS = 10 V
0V
1
0.1
0.01
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
2SK3814
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
Coss
100
Crss
VGS = 0 V
f = 1 MHz
10
0.01 0.1 1 10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60 12
ID = 60 A
50
VDD = 48 V
40 30 V
12 V
10
8
30 6
VGS
20 4
10
0
0
VDS
20 40 60 80
QG - Gate Charge - nC
2
0
100
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
di/dt = 100 A/µs
VGS = 0
1 10
IF - Diode Forward Current - A
100
Data Sheet D16740EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3814.PDF ] | |
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