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Datasheet GU60T03 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GU60T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/22 REVISED DATE :
GU60T 03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 12m 45A
The GU60T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-eff |  GTM | mosfet |
GU6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GU60L02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/03/01 REVISED DATE :2005/12/12B
GU60L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 13m 50A
The GU60L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an GTM mosfet | | |
| 2 | GU60N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/01/25 REVISED DATE :2005/10/19B
GU60N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 16.5m 55A
The GU60N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance GTM mosfet | | |
| 3 | GU60T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/22 REVISED DATE :
GU60T 03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 12m 45A
The GU60T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-eff GTM mosfet | | |
| 4 | GU6679 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/06/28 REVISED DATE :
GU6679
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 9m -75A
The GU6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec GTM mosfet | |
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