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What is GTS9926E?

This electronic component, produced by the manufacturer "GTM", performs the same function as "N-CHANNEL ENHANCEMENT MODE POWER MOSFET".


GTS9926E Datasheet PDF - GTM

Part Number GTS9926E
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturers GTM 
Logo GTM Logo 


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ISSUED DATE :2005/01/07
REVISED DATE :2006/12/25B
GTS9926E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
28m
4.6A
Description
The GTS9926E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
*Surface mount package
Package Dimensions
REF.
A
A1
b
c
D
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current3 , VGS@10V
Continuous Drain Current3 , VGS@10V
Pulsed Drain Current1,2
Total Power Dissipation
VGS
ID @TA=25
ID @TA=70
IDM
PD @Ta=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-a
Millimeter
Min. Max.
- 1.20
0.05
0.15
0.19
0.30
0.09
0.20
2.90
3.10
REF.
E
E1
e
L
S
Ratings
20
±12
4.6
3.7
20
1
0.008
-55 ~ +150
Value
125
Millimeter
Min. Max.
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
0° 8°
Unit
V
V
A
A
A
W
W/
Unit
/W
GTC9926E
Page: 1/4


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GTS9926E electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
GTS9926The function is N-CHANNEL ENHANCEMENT MODE POWER MOSFET. GTMGTM
GTS9926EThe function is N-CHANNEL ENHANCEMENT MODE POWER MOSFET. GTMGTM

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